公开(公告)号：US20220155148A1

公开(公告)日：2022-05-19

申请号：US17609335

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Shu-Kwan LAU ,  Enle CHOO ,  Ala MORADIAN ,  Flora Fong-Song CHANG ,  Maxim D. SHAPOSHNIKOV ,  Bindusagar MARATH SANKARATHODI ,  Zhepeng CONG ,  Zhiyuan YE ,  Vilen K. NESTOROV ,  Surendra Singh SRIVASTAVA ,  Saurabh CHOPRA ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU

IPC: G01J5/00 ,  H01L21/67

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

公开(公告)号：US20250096045A1

公开(公告)日：2025-03-20

申请号：US18965312

申请日：2024-12-02

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Shu-Kwan LAU ,  Ala MORADIAN ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Vilen K. NESTOROV ,  Zhiyuan YE ,  Bindusagar MARATH SANKARATHODI ,  Maxim D. SHAPOSHNIKOV ,  Surendra Singh SRIVASTAVA ,  Zhepeng CONG ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU ,  Balakrishnam R. JAMPANA

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

公开(公告)号：US20210028075A1

公开(公告)日：2021-01-28

申请号：US16938510

申请日：2020-07-24

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Shu-Kwan LAU ,  Ala MORADIAN ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Vilen K. NESTOROV ,  Zhiyuan YE ,  Bindusagar MARATH SANKARATHODI ,  Maxim D. SHAPOSHNIKOV ,  Surendra Singh SRIVASTAVA ,  Zhepeng CONG ,  Patricia M. LIU ,  Errol C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU ,  Balakrishnam R. JAMPANA

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.