公开(公告)号：US20250037975A1

公开(公告)日：2025-01-30

申请号：US18361267

申请日：2023-07-28

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Nimrod SMITH ,  Khokan C. PAUL ,  Tao SHENG

IPC: H01J37/32 ,  H01L21/67

Abstract: A flow apparatus and process chamber having the same are described herein. In one example, flow apparatus for use in semiconductor processing comprises an inject assembly and an inductive heater coupled to the inject assembly. The inject assembly comprises an inject body, a first gas inlet configured to flow a first gas through the inject body, and a plurality of flow channels disposed in the inject body, the plurality of flow channels coupled to the first gas inlet. The inductive heater is configured to heat a gas and comprises a heater housing, a graphite rod disposed in the heater housing, the graphite rod having a distal end and proximate end, an inductive coil disposed around the graphite rod, and a second gas inlet configured to flow a second gas between the heater housing and a graphite rod.

公开(公告)号：US20240410078A1

公开(公告)日：2024-12-12

申请号：US18805150

申请日：2024-08-14

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nyi Oo MYO ,  Tao SHENG ,  Yong ZHENG

IPC: C30B25/16 ,  B41J2/16 ,  C23C14/50 ,  C23C14/54 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B23/00 ,  C30B23/06 ,  C30B25/10 ,  C30B25/12 ,  G01B11/06 ,  G01N21/55 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to apparatus, systems, and methods for in-situ film growth rate monitoring. A thickness of a film on a substrate is monitored during a substrate processing operation that deposits the film on the substrate. The thickness is monitored while the substrate processing operation is conducted. The monitoring includes directing light in a direction toward a crystalline coupon. The direction is perpendicular to a heating direction. In one implementation, a reflectometer system to monitor film growth during substrate processing operations includes a first block that includes a first inner surface. The reflectometer system includes a light emitter disposed in the first block and oriented toward the first inner surface, and a light receiver disposed in the first block and oriented toward the first inner surface. The reflectometer system includes a second block opposing the first block.

公开(公告)号：US20240274463A1

公开(公告)日：2024-08-15

申请号：US18108407

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Nimrod SMITH ,  Tao SHENG ,  Chen-Ying WU ,  Hui CHEN ,  Xinning LUAN

IPC: H01L21/687 ,  H01L21/02

CPC classification number: H01L21/68735 ,  H01L21/0262

Abstract: The present disclosure relates to overlapping substrate supports and pre-heat rings, and related process kits, processing chambers, methods, and components to facilitate process adjustability. In one or more embodiments, a substrate support applicable for use in semiconductor manufacturing includes a first side face and a second side face opposing the first side face. The first side face includes a support surface. The second side face includes a backside surface, and a first shoulder protruding relative to the backside surface. The first shoulder is disposed outwardly of the backside surface. The substrate support includes an arcuate outer face extending between the first side face and the second side face.

公开(公告)号：US20240141487A1

公开(公告)日：2024-05-02

申请号：US17975195

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Khokan C. PAUL ,  Nimrod SMITH ,  Tao SHENG ,  Vinh TRAN

IPC: C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC classification number: C23C16/45517 ,  C23C16/4583 ,  C30B25/12 ,  C30B25/14 ,  C23C16/4408

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a disk and liner assembly includes a quartz disk having an outer diameter, a plurality of holes or slots formed in the quartz disk, and a quartz ring having an inner diameter less than the outer diameter of the quartz disk.

公开(公告)号：US20240035161A1

公开(公告)日：2024-02-01

申请号：US17873842

申请日：2022-07-26

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ashur J. ATANOS ,  Tao SHENG ,  Nimrod SMITH ,  Vinh N. TRAN

IPC: C23C16/458 ,  C23C16/48 ,  H05B1/02 ,  H05B3/00 ,  H05B3/06

CPC classification number: C23C16/4585 ,  C23C16/482 ,  H05B1/0233 ,  H05B3/0047 ,  H05B3/06

Abstract: An apparatus for heating a gas is described. The apparatus is a pre-heat ring and heater assembly positioned in a deposition chamber, such as an epitaxial deposition chamber. The pre-heat ring has a first portion configured to be heated using one or more heaters. The one or more heaters are disposed through a sidewall of the process volume beneath the pre-heat ring and are configured to heat the pre-heat ring so that gas flowed over the pre-heat ring is also heated before being flowed over a substrate. The one or more heaters may include two heaters disposed at distal ends of the first portion of the pre-heat ring. One or more temperature sensors are also configured to measure a temperature of the pre-heat ring.

公开(公告)号：US20230407478A1

公开(公告)日：2023-12-21

申请号：US17871607

申请日：2022-07-22

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Ala MORADIAN ,  Tao SHENG ,  Nimrod SMITH ,  Ashur J. ATANOS ,  Vinh N. TRAN

IPC: C23C16/458 ,  C23C16/44

CPC classification number: C23C16/458 ,  C23C16/4408 ,  C23C16/4405

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

公开(公告)号：US20230187240A1

公开(公告)日：2023-06-15

申请号：US17546769

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Tao SHENG ,  Vinh N. TRAN

IPC: H01L21/67 ,  H01L21/3065 ,  G01J5/00

CPC classification number: H01L21/67248 ,  H01L21/3065 ,  G01J5/0007

Abstract: A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.

公开(公告)号：US20220325400A1

公开(公告)日：2022-10-13

申请号：US17224537

申请日：2021-04-07

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Schubert CHU ,  Nyi Oo MYO ,  Karlik Bhupendra SHAH ,  Zhiyuan YE ,  Richard O. COLLINS

IPC: C23C14/24 ,  H01L21/67 ,  C23C14/50

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

公开(公告)号：US20160133504A1

公开(公告)日：2016-05-12

申请号：US14885016

申请日：2015-10-16

Applicant: Applied Materials, Inc.

Inventor： Schubert S. CHU ,  Kartik SHAH ,  Anhthu NGO ,  Karthik RAMANATHAN ,  Nitin PATHAK ,  Nyi O. MYO ,  Paul BRILLHART ,  Richard O. COLLINS ,  Kevin Joseph BAUTISTA ,  Edric TONG ,  Zhepeng CONG ,  Anzhong CHANG ,  Kin Pong LO ,  Manish HEMKAR

IPC: H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  H01L21/67115

Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.

Abstract translation: 本公开的实施方式一般涉及用于半导体衬底的热处理的基座。 在一个实施方式中，基座包括围绕并联接到内部区域的第一边缘和设置在内边缘和第一边缘之间的第二边缘。 第二边缘包括具有形成在其中的多个切口的成角度的支撑表面，并且成角度的支撑表面相对于内部区域的顶部表面倾斜。

公开(公告)号：US20150340266A1

公开(公告)日：2015-11-26

申请号：US14698793

申请日：2015-04-28

Applicant: Applied Materials, Inc.

Inventor： Anhthu NGO ,  Zuoming ZHU ,  Balasubramanian RAMACHANDRAN ,  Paul BRILLHART ,  Edric TONG ,  Anzhong CHANG ,  Kin Pong LO ,  Kartik SHAH ,  Schubert S. CHU ,  Zhepeng CONG ,  James Francis MACK ,  Nyi O. MYO ,  Kevin Joseph BAUTISTA ,  Xuebin LI ,  Yi-Chiau HUANG ,  Zhiyuan YE

IPC: H01L21/687 ,  H01L21/673

CPC classification number: H01L21/68735 ,  B05C13/00 ,  B05C13/02 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/67326 ,  H01L21/6875 ,  H01L21/68785

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Abstract translation: 在一个实施例中，提供了用于热处理的基座。 基座包括围绕并连接到内部盘的外缘，外缘具有内边缘和外边缘。 所述感受器还包括一个或多个结构，用于当所述基底由所述基座支撑时减小基底和所述基座之间的接触表面积。 所述一个或多个结构中的至少一个结合到靠近外缘的内边缘的内部盘。