公开(公告)号：US20240120197A1

公开(公告)日：2024-04-11

申请号：US18538996

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Mostafa BAGHBANZADEH ,  Tao SHENG ,  Enle CHOO

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  G01B17/02

CPC classification number: H01L21/02293 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/463 ,  C23C16/52 ,  G01B17/02 ,  G01B17/025

Abstract: The present disclosure generally relates to process chambers for semiconductor processing. In one embodiment, a growth monitor for substrate processing is provided. The growth monitor includes a sensor holder and a crystal disposed in the sensor holder having a front side and a back side. An opening is formed in the sensor holder exposing a front side of the crystal. A gas inlet is disposed through the sensor holder to a plenum formed by the back side of the crystal and the sensor holder. A gas outlet is fluidly coupled to the plenum.

公开(公告)号：US20220090293A1

公开(公告)日：2022-03-24

申请号：US17027385

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Zuoming ZHU ,  Patricia M. LIU ,  Shu-Kwan LAU ,  Flora Fong-Song CHANG ,  Enle CHOO ,  Zhiyuan YE

IPC: C30B25/16 ,  C30B25/10 ,  H01L21/67

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

公开(公告)号：US20250068191A1

公开(公告)日：2025-02-27

申请号：US18484112

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Enle CHOO ,  Toshiyuki NAKAGAWA ,  Shu-Kwan LAU

IPC: G05D11/13 ,  G05D7/06

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first ratio flow controllers operable to control a flow of a first gas, a plurality of first valves operable to open and close the flow of the first gas, one or more second ratio flow controllers operable to control a flow of a second gas, and a plurality of second valves operable to open and close the flow of the second gas. The gas circuit further includes a first set of gas lines connected to the first ratio flow controllers, and a second set of gas lines connected to the second ratio flow controllers.

公开(公告)号：US20250027716A1

公开(公告)日：2025-01-23

申请号：US18355938

申请日：2023-07-20

Applicant: Applied Materials, Inc.

Inventor： Raja Murali DHAMODHARAN ,  Shu-Kwan LAU ,  Shainish NELLIKKA ,  Enle CHOO ,  Kalaivanan MOHANADASS ,  Aniketnitin PATIL

IPC: F27B17/00 ,  H01L21/67 ,  H05B3/00

Abstract: A modular reflective heating system for use in a process chamber is provided. The modular reflective heating system includes: a plurality of connectors; a plurality of lamps, each lamp connected to at least one of the connectors; a reflector including: a base; and a reflective assembly including a first plurality of reflective portions and a second plurality of reflective portions. Each reflective portion in the first plurality of reflective portions and the second plurality of reflective portions is connected to the base, and each reflective portion in the first plurality of reflective portions and the second plurality of reflective portions is configured to be individually disconnected from the base. The modular reflective heating system further includes a spare reflective portion configured to replace a first reflective portion in the first plurality of reflective portions or the second plurality of reflective portions.

公开(公告)号：US20220397706A1

公开(公告)日：2022-12-15

申请号：US17725010

申请日：2022-04-20

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Enle CHOO ,  Danny Don WANG ,  Shainish NELLIKKA ,  Toshiyuki NAKAGAWA ,  Zhiyuan YE ,  Abhishek DUBE

IPC: G02B5/09 ,  H05B3/00

Abstract: Apparatus for heating a substrate within a substrate processing chamber are described herein. More specifically, possible lamp modules for use within a substrate processing chamber are described. The lamp modules include a reflector body. The reflector body is a reflective material. The reflector body includes grooves disposed in a surface and configured to direct radiant energy towards a substrate. Each ring includes multiple grooves with different cross sections to allow radiant energy to be directed at different radial positions on the substrate from the same ring. The grooves may be either curved or linear grooves.

公开(公告)号：US20220283029A1

公开(公告)日：2022-09-08

申请号：US17630235

申请日：2020-07-08

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Martin A. HILKENE ,  Avinash SHERVEGAR ,  Surendra Singh SRIVASTAVA ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Zhiyuan YE ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Bindusugar MARATH SANKARATHODI ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny LIN ,  Nyi O. MYO ,  Schubert S. CHU

IPC: G01J3/443 ,  C23C16/455

Abstract: One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

公开(公告)号：US20220155148A1

公开(公告)日：2022-05-19

申请号：US17609335

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Shu-Kwan LAU ,  Enle CHOO ,  Ala MORADIAN ,  Flora Fong-Song CHANG ,  Maxim D. SHAPOSHNIKOV ,  Bindusagar MARATH SANKARATHODI ,  Zhepeng CONG ,  Zhiyuan YE ,  Vilen K. NESTOROV ,  Surendra Singh SRIVASTAVA ,  Saurabh CHOPRA ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU

IPC: G01J5/00 ,  H01L21/67

Abstract: An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

公开(公告)号：US20250132176A1

公开(公告)日：2025-04-24

申请号：US18912896

申请日：2024-10-11

Applicant: Applied Materials, Inc.

Inventor： Enle CHOO ,  Shu-Kwan LAU ,  Amir H. TAVAKOLI

IPC: H01L21/67 ,  H05B3/62

Abstract: The present disclosure relates to heaters, and related chamber kits and processing chambers, for semiconductor manufacturing. In one or more embodiments, a chamber kit applicable for semiconductor manufacturing includes a heater and a liner. The heater includes an arcuate heater body including one or more first sections, one or more second sections, and one or more connector sections. The heater includes a first electrode coupled to the arcuate heater body, and a second electrode coupled to the arcuate heater body. The liner includes a ledge sized and shaped to support the arcuate heater body, a first opening sized and shaped to receive at least part of the heater therethrough, and a second opening sized and shaped to receive at least part of the heater therethrough.

公开(公告)号：US20250096045A1

公开(公告)日：2025-03-20

申请号：US18965312

申请日：2024-12-02

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Shu-Kwan LAU ,  Ala MORADIAN ,  Enle CHOO ,  Flora Fong-Song CHANG ,  Vilen K. NESTOROV ,  Zhiyuan YE ,  Bindusagar MARATH SANKARATHODI ,  Maxim D. SHAPOSHNIKOV ,  Surendra Singh SRIVASTAVA ,  Zhepeng CONG ,  Patricia M. LIU ,  Errol Antonio C. SANCHEZ ,  Jenny C. LIN ,  Schubert S. CHU ,  Balakrishnam R. JAMPANA

IPC: H01L21/66 ,  H01L21/67

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

公开(公告)号：US20250066915A1

公开(公告)日：2025-02-27

申请号：US18484057

申请日：2023-10-10

Applicant: Applied Materials, Inc.

Inventor： Enle CHOO ,  Martin TRUEMPER ,  Shu-Kwan LAU ,  Jason JEWELL

IPC: C23C16/455 ,  C23C16/52

Abstract: Embodiments generally relate to gas circuits for distributing gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, flow controllers of a gas circuit are used to stabilize, distribute, and switch gases for processing of substrates applicable for semiconductor manufacturing. In one or more embodiments, a gas circuit includes one or more first flow controllers operable to flow a first gas, one or more second flow controllers operable to flow a second gas, and one or more valve assemblies. The valve assembl(ies) include a first supply line connected to a respective first flow controller and a second supply line connected to a respective second flow controller. The gas circuit further includes a plurality of valves operable to open and close the respective flow of the first gas and the second gas received from the first flow controller(s) and the second flow controller(s).