公开(公告)号：US20240194605A1

公开(公告)日：2024-06-13

申请号：US18534333

申请日：2023-12-08

Applicant: Applied Materials, Inc.

Inventor： Mohammad Mahdi TAVAKOLI ,  Avgerinos V. GELATOS ,  Jiajie CEN ,  Kevin KASHEFI ,  Joung Joo LEE ,  Zhihui LIU ,  Yang ZHOU ,  Zhiyuan WU ,  Meng-Shan WU

IPC: H01L23/532 ,  H01J37/32 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L23/53266 ,  H01J37/32357 ,  H01L21/02068 ,  H01L21/76843 ,  H01L21/76877 ,  H01J2237/335

Abstract: A semiconductor structure includes a first level comprising a metal layer within a first dielectric layer formed on a substrate, a second level formed on the first level, the second level comprising an interconnect within a second dielectric layer and a barrier layer formed around the interconnect, and a metal capping layer disposed at an interface between the metal layer and the interconnect, wherein the metal capping layer comprises tungsten (W) and has a thickness of between 20 Å and 40 Å.

公开(公告)号：US20230343645A1

公开(公告)日：2023-10-26

申请号：US18128389

申请日：2023-03-30

Applicant: Applied Materials, Inc.

Inventor： Meng-Shan WU ,  Chih-Hsun HSU ,  Jiang LU ,  Shiyu YUE ,  Chun-chieh WANG ,  Annamalai LAKSHMANAN ,  Yixiong YANG

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/76871 ,  H01L21/76843 ,  H01L23/53266 ,  H01L21/76865 ,  H01L21/76831

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on exposed top surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in the top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes the oxidized portion of the seed layer. A second etch process removes portions of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

公开(公告)号：US20230343644A1

公开(公告)日：2023-10-26

申请号：US18070383

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Chih-Hsun HSU ,  Shiyu YUE ,  Jiang LU ,  Rongjun WANG ,  Xianmin TANG ,  Zhenjiang CUI ,  Chi Hong CHING ,  Meng-Shan WU ,  Chun-chieh WANG ,  Wei LEI ,  Yu LEI

IPC: H01L21/768 ,  H01L21/67 ,  H01L23/532

CPC classification number: H01L21/76877 ,  H01L21/67063 ,  H01L21/6719 ,  H01L21/76843 ,  H01L21/76871 ,  H01L23/53266

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

公开(公告)号：US20230343643A1

公开(公告)日：2023-10-26

申请号：US17868475

申请日：2022-07-19

Applicant: Applied Materials, Inc.

Inventor： Chih-Hsun HSU ,  Shiyu YUE ,  Wei LEI ,  Yi XU ,  Jiang LU ,  Yu LEI ,  Ziye XIONG ,  Tsung-Han YANG ,  Zhimin QI ,  Aixi ZHANG ,  Jie ZHANG ,  Liqi WU ,  Rongjun WANG ,  Shihchung CHEN ,  Meng-Shan WU ,  Chun-Chieh WANG ,  Annamalai LAKSHMANAN ,  Yixiong YANG ,  Xianmin TANG

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76877 ,  H01L21/76876 ,  H01L21/76843 ,  H01L21/76865 ,  H01L23/5226 ,  H01L21/76826

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.