公开(公告)号：US20210040607A1

公开(公告)日：2021-02-11

申请号：US16986632

申请日：2020-08-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi

IPC: C23C16/34 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11578 ,  C23C16/40

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.