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公开(公告)号：US20240045399A1
公开(公告)日：2024-02-08
申请号：US18038441
申请日：2022-05-17
Applicant: Applied Materials, Inc.
Inventor： Qinglin Chai , Yue Ma , Liming Zhang , Xinhai Han , Chuan Ying Wang
IPC: G05B19/4099
CPC classification number: G05B19/4099 , G05B2219/45031
Abstract: A method includes receiving time trace sensor data associated with a substrate processing procedure. The substrate processing procedure includes two or more sets of processing conditions. At least a first set of processing conditions and a second set of processing conditions each include one or more operations performed repeatedly. The method further includes separating a first and second portion of the time trace sensor data corresponding to the first and second sets of processing conditions into a first and second plurality of cycle data. The method further includes processing the first plurality of cycle data and the second plurality of cycle data to generate summary data. The method further includes providing an alert to a user. The alert is based on the summary data.
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公开(公告)号：US20250101578A1
公开(公告)日：2025-03-27
申请号：US18975559
申请日：2024-12-10
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher R. Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Grace Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi , SeoYoung Lee
Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.
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公开(公告)号：US11145504B2
公开(公告)日：2021-10-12
申请号：US16597466
申请日：2019-10-09
Applicant: Applied Materials, Inc.
Inventor： Zhijun Jiang , Ganesh Balasubramanian , Arkajit Roy Barman , Hidehiro Kojiri , Xinhai Han , Deenesh Padhi , Chuan Ying Wang , Yue Chen , Daemian Raj Benjamin Raj , Nikhil Sudhindrarao Jorapur , Vu Ngoc Tran Nguyen , Miguel S. Fung , Jose Angelo Olave , Thian Choi Lim
Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.
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公开(公告)号：US20220068630A1
公开(公告)日：2022-03-03
申请号：US17009002
申请日：2020-09-01
Applicant: Applied Materials, Inc.
Inventor： Chuanxi Yang , Hang Yu , Yu Yang , Chuan Ying Wang , Allison Yau , Xinhai Han , Sanjay G. Kamath , Deenesh Padhi
Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.
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公开(公告)号：US20210040607A1
公开(公告)日：2021-02-11
申请号：US16986632
申请日：2020-08-06
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi
IPC: C23C16/34 , H01L27/11524 , H01L27/11551 , H01L27/1157 , H01L27/11578 , C23C16/40
Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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Patent Agency Ranking
6.发明授权公开(公告)号：US12265379B2
公开(公告)日：2025-04-01
申请号：US17737318
申请日：2022-05-05
Applicant: Applied Materials, Inc.
Inventor： Mitesh Sanghvi , Venkatanarayana Shankarmurthy , Yulian Yao , Chuan Ying Wang , Xinhai Han
IPC: G05B19/418 , C23C16/455 , C23C16/52
Abstract: An electronic device manufacturing system capable of obtaining metrology data associated with a deposition process performed on a substrate according to a process recipe, wherein the deposition process generates a plurality of layers on a surface of the substrate. The manufacturing system can further obtain an expected profile associate with the process recipe, wherein the expected profile comprises a plurality of values indicative of a desired thickness for a plurality of layers of the process recipe. The manufacturing system can further generate a correction profile based on the metrology data and the expected profile, wherein the correction profile comprises a deposition time offset value for at least one layer of the plurality of layers. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe and cause a deposition step to be performed on the substrate according to the updated process recipe.
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公开(公告)号：US20220216048A1
公开(公告)日：2022-07-07
申请号：US17142641
申请日：2021-01-06
Applicant: Applied Materials, Inc.
Inventor： Tianyang Li , Deenesh Padhi , Xinhai Han , Hang Yu , Chuan Ying Wang
IPC: H01L21/02
Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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公开(公告)号：US12195846B2
公开(公告)日：2025-01-14
申请号：US16986632
申请日：2020-08-06
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher R. Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Grace Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi , SeoYoung Lee
Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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9.发明公开公开(公告)号：US20230359179A1
公开(公告)日：2023-11-09
申请号：US17737318
申请日：2022-05-05
Applicant: Applied Materials, Inc.
Inventor： Mitesh Sanghvi , Venkatanarayana Shankarmurthy , Yulian Yao , Chuan Ying Wang , Xinhai Han
IPC: G05B19/418 , C23C16/455 , C23C16/52
CPC classification number: G05B19/41865 , C23C16/45525 , C23C16/52 , G05B2219/31443 , G05B2219/45031
Abstract: An electronic device manufacturing system capable of obtaining metrology data associated with a deposition process performed on a substrate according to a process recipe, wherein the deposition process generates a plurality of layers on a surface of the substrate. The manufacturing system can further obtain an expected profile associate with the process recipe, wherein the expected profile comprises a plurality of values indicative of a desired thickness for a plurality of layers of the process recipe. The manufacturing system can further generate a correction profile based on the metrology data and the expected profile, wherein the correction profile comprises a deposition time offset value for at least one layer of the plurality of layers. The manufacturing system can further generate an updated process recipe by applying the correction profile to the process recipe and cause a deposition step to be performed on the substrate according to the updated process recipe.
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公开(公告)号：US11538677B2
公开(公告)日：2022-12-27
申请号：US17009002
申请日：2020-09-01
Applicant: Applied Materials, Inc.
Inventor： Chuanxi Yang , Hang Yu , Yu Yang , Chuan Ying Wang , Allison Yau , Xinhai Han , Sanjay G. Kamath , Deenesh Padhi
Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.
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