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公开(公告)号：US20210035843A1
公开(公告)日：2021-02-04
申请号：US16936042
申请日：2020-07-22
Applicant: Applied Materials, Inc.
Inventor： Jian Li , Juan C. Rocha , Zheng J. Ye , Daemian Raj Benjamin Raj , Shailendra Srivastava , Xinhai Han , Deenesh Padhi , Kesong Hu , Chuan-Ying Wang
IPC: H01L21/683 , H02N13/00 , H01L21/50
Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.
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公开(公告)号：US20250101578A1
公开(公告)日：2025-03-27
申请号：US18975559
申请日：2024-12-10
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher R. Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Grace Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi , SeoYoung Lee
Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.
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Patent Agency Ranking
公开(公告)号：US11946140B2
公开(公告)日：2024-04-02
申请号：US17213908
申请日：2021-03-26
Applicant: Applied Materials, Inc.
Inventor： Anantha K. Subramani , Seyyed Abdolreza Fazeli , Yang Guo , Ramcharan Sundar , Arun Kumar Kotrappa , Steven Mosbrucker , Steven D. Marcus , Xinhai Han , Kesong Hu , Tianyang Li , Philip A. Kraus
IPC: C23C16/455 , C23C14/56 , C23C16/458 , H01J37/32
CPC classification number: C23C16/45565 , C23C14/564 , C23C16/45536 , C23C16/4586 , H01J37/32082
Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.
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公开(公告)号：US12195846B2
公开(公告)日：2025-01-14
申请号：US16986632
申请日：2020-08-06
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher R. Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Grace Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi , SeoYoung Lee
Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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公开(公告)号：US11501993B2
公开(公告)日：2022-11-15
申请号：US16936042
申请日：2020-07-22
Applicant: Applied Materials, Inc.
Inventor： Jian Li , Juan Carlos Rocha-Alvarez , Zheng John Ye , Daemian Raj Benjamin Raj , Shailendra Srivastava , Xinhai Han , Deenesh Padhi , Kesong Hu , Chuan Ying Wang
IPC: H01L21/683 , H01L21/50 , H02N13/00 , H01L21/60
Abstract: Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.
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公开(公告)号：US20220307131A1
公开(公告)日：2022-09-29
申请号：US17213908
申请日：2021-03-26
Applicant: Applied Materials, Inc.
Inventor： Anantha K. Subramani , Seyyed Abdolreza Fazeli , Yang Guo , Ramcharan Sundar , Arun Kumar Kotrappa , Steven Mosbrucker , Steven D. Marcus , Xinhai Han , Kesong Hu , Tianyang Li , Philip A. Kraus
IPC: C23C16/455 , C23C16/458 , H01J37/32 , C23C14/56
Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.
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公开(公告)号：US20210040607A1
公开(公告)日：2021-02-11
申请号：US16986632
申请日：2020-08-06
Applicant: Applied Materials, Inc.
Inventor： Xinhai Han , Hang Yu , Kesong Hu , Kristopher Enslow , Masaki Ogata , Wenjiao Wang , Chuan Ying Wang , Chuanxi Yang , Joshua Maher , Phaik Lynn Leong , Qi En Teong , Alok Jain , Nagarajan Rajagopalan , Deenesh Padhi
IPC: C23C16/34 , H01L27/11524 , H01L27/11551 , H01L27/1157 , H01L27/11578 , C23C16/40
Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.
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