公开(公告)号：US20030230385A1

公开(公告)日：2003-12-18

申请号：US10172534

申请日：2002-06-13

Applicant: Applied Materials, Inc.

Inventor： Joseph Bach ,  Shaoher X. Pan

IPC: C23F001/00

CPC classification number: H01L21/6719 ,  H01J37/32009 ,  H01J37/3266 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67207

Abstract: Embodiments of the invention provide a tandem magnetically enhanced etch chamber. The tandem chamber generally includes a first tandem processing chamber, a second tandem processing chamber positioned adjacent the first tandem processing chamber and being partially separated therefrom by a shared central wall, and a pumping apparatus cooperatively in fluid communication with the first and second chambers. The first tandem processing chamber generally includes a first substrate support member positioned in a first chamber, a first plasma generation device in communication with the first chamber, and a plurality of first selectively actuated electromagnets positioned around the first chamber. The second tandem processing chamber generally includes a second substrate support member positioned in a second chamber, a second plasma generation device in communication with the second chamber, and a plurality of second selectively actuated electromagnets positioned around the second chamber.

Abstract translation: 本发明的实施例提供一种串联磁增强蚀刻室。 串联室通常包括第一串联处理室，与第一串联处理室相邻设置的第二串联处理室，并且通过共享的中心壁与其部分地分离;以及与第一和第二室流体连通的泵送装置。 第一串联处理室通常包括定位在第一室中的第一衬底支撑构件，与第一室连通的第一等离子体产生装置以及围绕第一室定位的多个第一选择性驱动的电磁体。 第二串联处理室通常包括定位在第二室中的第二基板支撑构件，与第二室连通的第二等离子体产生装置，以及围绕第二室定位的多个第二选择性驱动的电磁体。

公开(公告)号：US20030173333A1

公开(公告)日：2003-09-18

申请号：US10358086

申请日：2003-02-03

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Scott Williams ,  Shaoher X. Pan

IPC: C23F001/00 ,  C03C015/00

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32137 ,  Y10S134/902 ,  Y10S438/905 ,  Y10S438/906

Abstract: A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF6 and Ar, the volumetric flow ratio of SF6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF4 and Ar, the volumetric flow ratio of CF4 to other components of the second process gas being from about 1:0 to about 1:10.

Abstract translation: 用于蚀刻基板并去除沉积在蚀刻室中的表面上的蚀刻残余物的方法具有两个阶段。 在第一阶段中，在腔室中设置通电的第一处理气体，在第二阶段中，在室中设置通电的第二处理气体。 通电的第一工艺气体包括SF 6和Ar，SF 6与第一工艺气体的其它组分的体积流量比为约5:1至约1:10。 通电的第二工艺气体包括CF 4和Ar，CF 4与第二工艺气体的其它组分的体积流量比为约1:0至约1:10。

公开(公告)号：US20020185469A1

公开(公告)日：2002-12-12

申请号：US10194167

申请日：2002-07-11

Applicant: Applied Materials, Inc.

Inventor： Dragan Podlesnik ,  Thorsten Lill ,  Jeff Chinn ,  Shaoher X. Pan ,  Anisul Khan ,  Maocheng Li ,  Yiqiong Wang

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68

CPC classification number: H01L27/1087 ,  B81B2201/052 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00119 ,  B81C2201/016 ,  H01L21/3065 ,  H01L21/3086

Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes. The method is also useful whenever it is necessary to maintain tight control over the dimensions of the shaped opening.

Abstract translation: 本公开涉及我们发现用于蚀刻衬底中的多部分空腔的特别有效的方法。 该方法提供了首先蚀刻成形开口，在成形开口的内表面的至少一部分上沉积保护层，然后直接在成形开口下面蚀刻成形腔，并与成形开口连续连通。 保护层在蚀刻成形腔体期间保护成形开口的蚀刻轮廓，从而如果需要，成形开口和成形腔体可以被蚀刻以具有不同的形状。 在本发明方法的特定实施例中，横向蚀刻阻挡层和/或注入的蚀刻停止点也用于引导蚀刻工艺。 本发明的方法可以应用于需要或期望提供具有不同形状的成形开口和下面的成形腔的任何应用。 只要需要对成形开口的尺寸进行严格控制，该方法也是有用的。