公开(公告)号：US10971390B2

公开(公告)日：2021-04-06

申请号：US16437048

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz Khaja ,  Liangfa Hu ,  Sudha S. Rathi ,  Ganesh Balasubramanian

IPC: H01L21/687 ,  H01L21/67

Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.

公开(公告)号：US11894228B2

公开(公告)日：2024-02-06

申请号：US17412721

申请日：2021-08-26

Applicant: Applied Materials, Inc.

Inventor： Sudha S. Rathi ,  Ganesh Balasubramanian ,  Nagarajan Rajagopalan ,  Abdul Aziz Khaja ,  Prashanthi Para ,  Hiral D. Tailor

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332

Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.

公开(公告)号：US20230061249A1

公开(公告)日：2023-03-02

申请号：US17412721

申请日：2021-08-26

Applicant: Applied Materials, Inc.

Inventor： Sudha S. Rathi ,  Ganesh Balasubramanian ,  Nagarajan Rajagopalan ,  Abdul Aziz Khaja ,  Prashanthi Para ,  Hiral D. Tailor

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/50

Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.

公开(公告)号：US20220293416A1

公开(公告)日：2022-09-15

申请号：US17200008

申请日：2021-03-12

Applicant: Applied Materials, Inc.

Inventor： Sudha S. Rathi ,  Ganesh Balasubramanian ,  Tae Won Kim

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  C23C16/50 ,  C23C16/26 ,  C23C16/44

Abstract: Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor and an inert precursor within a processing region of a semiconductor processing chamber. The methods may include, subsequent a first period of time, increasing a flow rate of the carbon-containing precursor and a flow rate of the inert precursor. The methods may include increasing a plasma power at which the plasma is formed. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber.