公开(公告)号：US20230029265A1

公开(公告)日：2023-01-26

申请号：US17384096

申请日：2021-07-23

Applicant: Applied Materials, Inc.

Inventor： Xi Chen ,  Shreesha Yogish Rao ,  Sheng Guo ,  Chi H. Ching ,  Thomas Blasius Brezoczky ,  Cheng-Hsiung Tsai

IPC: B08B7/00 ,  H01J37/32 ,  B08B13/00

Abstract: Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.

公开(公告)号：US11772137B2

公开(公告)日：2023-10-03

申请号：US17384096

申请日：2021-07-23

Applicant: Applied Materials, Inc.

Inventor： Xi Chen ,  Shreesha Yogish Rao ,  Sheng Guo ,  Chi H. Ching ,  Thomas Blasius Brezoczky ,  Cheng-Hsiung Tsai

IPC: H01J37/32 ,  B08B7/00 ,  B08B13/00

CPC classification number: B08B7/0035 ,  B08B13/00 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32935 ,  H01J2237/2007 ,  H01J2237/335 ,  H01J2237/3341

Abstract: Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.