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    Three-dimensional surface metrology of wafers
    1.
    发明授权
    Three-dimensional surface metrology of wafers 有权

    公开(公告)号：US11662324B1

    公开(公告)日：2023-05-30

    申请号：US17698393

    申请日：2022-03-18

    Applicant: Applied Materials Israel Ltd.

    Inventor： Ido Almog ,  Ron Bar-Or ,  Lior Yaron

    IPC: G01N23/22 ,  G01Q60/24 ,  G01N23/2251

    CPC classification number: G01N23/2251 ,  G01Q60/24 ,  G01N2223/07 ,  G01N2223/418 ,  G01N2223/507 ,  G01N2223/6116

    Abstract: A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

    METHOD AND SYSTEM FOR CALIBRATION OF DIFFRACTION ANGLES
    2.
    发明申请
    METHOD AND SYSTEM FOR CALIBRATION OF DIFFRACTION ANGLES 有权

    公开(公告)号：US20250095955A1

    公开(公告)日：2025-03-20

    申请号：US18370303

    申请日：2023-09-19

    Applicant: Applied Materials Israel Ltd.

    Inventor： Konstantin Chirko ,  Itamar Shani ,  Lior Yaron ,  Guy Eytan

    IPC: H01J37/26 ,  G01N23/203 ,  G01N23/2251 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28

    Abstract: Disclosed are method and system for calibrating a tilt angle of an electron beam of a backscattered scanning electron microscope including scanning a bare wafer at a plurality of electron beam tilt and azimuth angles, thereby obtaining a calibration map representing a crystal orientation of the bare wafer, selecting a tilt angle and defining an expected diffraction pattern associated with the tilt angle, based on the calibration map; scanning a patterned wafer at the selected tilt angle, comparing the diffraction pattern of the image obtained from the scanning of the patterned wafer at the selected tilt angle with the expected diffraction pattern; correcting the tilt angle of the electron beam of the BSEM tool, such that the diffraction pattern of the image obtained during scanning of the patterned wafer will align with the expected diffraction pattern.

    SCANNING ELECTRON MICROSCOPY-BASED TOMOGRAPHY OF SPECIMENS
    3.
    发明申请
    SCANNING ELECTRON MICROSCOPY-BASED TOMOGRAPHY OF SPECIMENS 有权

    公开(公告)号：US20240404784A1

    公开(公告)日：2024-12-05

    申请号：US18203034

    申请日：2023-05-29

    Applicant: Applied Materials Israel Ltd.

    Inventor： Itamar Shani ,  Konstantin Chirko ,  Lior Yaron ,  Guy Eytan ,  Guy Shwartz

    IPC: H01J37/28 ,  G06T11/00 ,  G06T11/20

    Abstract: Disclosed herein is a system for non-destructive tomography of specimens. The system includes a scanning electron microscope (SEM) and a processor(s). The SEM is configured to obtain a sinogram of a tested specimen, parameterized by a vector {right arrow over (s)}, by projecting e-beams on the tested specimen, at each of a plurality of projection directions and offsets, and. for each e-beam, measuring a respective intensity of electrons returned from the tested specimen, The processor(s) is configured to obtain a tomographic map, pertaining to the tested specimen, by determining values indicative of components of a vector {right arrow over (t)} defined by an equation W{right arrow over (t)}={right arrow over (s)}. W is a matrix with components wij specifying a contribution of a j-th voxel in a nominal specimen to an i-th element of a nominal sinogram of the nominal specimen. The matrix W accounts for e-beam expansion and attenuation with depth within the nominal specimen.

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