公开(公告)号：US20240371672A1

公开(公告)日：2024-11-07

申请号：US18687217

申请日：2022-08-29

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Yongfei WANG ,  Qing SHE ,  Yunfeng LAN

IPC: H01L21/677 ,  C23C16/44 ,  H01L21/67 ,  H01L21/687

Abstract: A semiconductor process chamber includes: a reaction chamber; a transfer chamber below the reaction chamber connected to the transfer chamber through a bottom opening; a base with a lifting shaft connected to a bottom of the base, where the base is able to rise and descend between the reaction chamber and the transfer chamber through the bottom opening; and an elastic annular sealing structure. The annular sealing structure is below the base and surrounding the lifting shaft of the base. When the base descends into the transfer chamber, the base presses down and compress the annular sealing structure; and when the base rises into the reaction chamber and pressure on the annular sealing structure is released, the annular sealing structure stretches until it abuts a bottom wall of the reaction chamber. to seal the bottom opening.

公开(公告)号：US20170330769A1

公开(公告)日：2017-11-16

申请号：US15529709

申请日：2015-11-25

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Qing SHE ,  Peng CHEN ,  Mengxin ZHAO ,  Peijun DING ,  Kui XU ,  Guodong BIAN

IPC: H01L21/67 ,  H01L21/02 ,  H01J37/32 ,  B08B7/00

CPC classification number: H01L21/67028 ,  B08B7/0035 ,  C23C16/0245 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32651 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/67069

Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21′) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21′) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24). The precleaning chamber (100, 200, 300) not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.

公开(公告)号：US20250046647A1

公开(公告)日：2025-02-06

申请号：US18696247

申请日：2022-09-26

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Shoulin HUANG ,  Jun ZHANG ,  Jingfeng WEI ,  Qing SHE

IPC: H01L21/687

Abstract: A wafer support structure disposed in a loading chamber of a semiconductor process device to support a wafer and drive the wafer to ascend or descend includes: a lifting component, a supporting component, a compressing component, and an adjusting component. The lifting component includes a lifting shaft. A mounting section is provided on the top surface of the lifting shaft. A first end of the supporting component is sleeved in a mounting hole of the mounting section. An inner peripheral wall of the mounting hole and an outer peripheral wall of the mounting section are separated by an adjustment space. A second end of the supporting component is arranged to extend along a radial direction of the lifting shaft. The compressing component is sleeved on an outer periphery of the mounting section and located in the adjustment space. The adjusting component is connected with the support component.

公开(公告)号：US20230162998A1

公开(公告)日：2023-05-25

申请号：US17918077

申请日：2021-04-01

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Jingfeng WEI ,  Qing SHE

IPC: H01L21/67 ,  H01L21/677 ,  C23C16/54

CPC classification number: H01L21/67167 ,  H01L21/67201 ,  H01L21/67769 ,  H01L21/67184 ,  H01L21/67742 ,  C23C16/54

Abstract: The present disclosure discloses a semiconductor processing apparatus, which is configured to perform processing on a wafer. The disclosed semiconductor processing apparatus includes a vacuum interlock chamber, a plurality of apparatus bodies, the apparatus body including a transfer platform, and at least two reaction chambers being arranged along a circumferential direction of the transfer platform, and a temporary storage channel, any two neighboring apparatus bodies being communicated through the temporary storage channel, and the temporary storage channel being configured to temporarily store the wafer. One of the plurality apparatus bodies is connected to the vacuum interlock chamber. The transfer platform is configured to transfer the wafer between the vacuum interlock chamber and the reaction chamber, between the temporary storage channel and the vacuum interlock chamber, and between the temporary storage channel and the reaction chamber. With the above solution, the problem that the productivity of the semiconductor processing apparatus is low is solved.