Semiconductor package structure having hollow chamber and bottom substrate and package process thereof
    1.
    发明授权
    Semiconductor package structure having hollow chamber and bottom substrate and package process thereof 有权
    具有中空室和底部基板的半导体封装结构及其封装工艺

    公开(公告)号:US09508676B1

    公开(公告)日:2016-11-29

    申请号:US14848439

    申请日:2015-09-09

    Abstract: A semiconductor package structure having hollow chamber includes a bottom substrate having a bottom baseboard and a bottom metal layer formed on a disposing area of the bottom baseboard, a connection layer formed on the bottom metal layer, and a top substrate. The bottom metal layer has at least one corner having a first and a second outer lateral surface, and an outer connection surface. A first extension line is formed from a first extreme point of the first outer lateral surface, and a second extension line is formed from a second extreme point of the second outer lateral surface. A first exposing area of the bottom baseboard is formed by connecting the first and second extreme points and a cross point of the first and second extreme points. The top substrate connects to the connection layer to form a hollow chamber between the top and bottom substrates.

    Abstract translation: 具有中空室的半导体封装结构包括:底部基板,具有形成在底部基板的设置区域上的底部基板和底部金属层,形成在底部金属层上的连接层和顶部基板。 底部金属层具有至少一个具有第一和第二外侧表面的角部和外部连接表面。 第一延伸线由第一外侧表面的第一极点形成,第二延伸线由第二外侧表面的第二极限点形成。 通过连接第一极点和第二极值点以及第一和第二极值点的交叉点来形成底部基板的第一暴露区域。 顶部衬底连接到连接层,以在顶部和底部衬底之间形成中空室。

    PROCESS FOR MANUFACTURING SEMICONDUCTOR PACKAGE HAVING HOLLOW CHAMBER
    2.
    发明申请
    PROCESS FOR MANUFACTURING SEMICONDUCTOR PACKAGE HAVING HOLLOW CHAMBER 审中-公开
    制造具有中空室的半导体封装的工艺

    公开(公告)号:US20160318756A1

    公开(公告)日:2016-11-03

    申请号:US14736328

    申请日:2015-06-11

    CPC classification number: H01L23/10 B81C1/00269 B81C2203/019 H01L21/50

    Abstract: A process for manufacturing a semiconductor package having a hollow chamber includes providing a bottom substrate having a bottom plate, a ring wall and a slot, wherein the ring wall and the bottom plate form the slot; forming an under ball metallurgy layer on a surface of the ring wall;bumping a plurality of solder balls on a surface of the under ball metallurgy layer, each of the solder balls comprises a diameter, wherein a spacing is spaced apart between two adjacent solder balls; performing reflow soldering to the solder balls for making the solder balls melting and interconnecting to form a connection layer; connecting a top substrate to the bottom substrate, wherein the lot of the bottom substrate is sealed by the top substrate to form a hollow chamber used for accommodating an electronic device.

    Abstract translation: 在球形冶金层的表面上碰撞多个焊球,每个焊球包括直径,其中间隔在两个相邻的焊球之间间隔开; 对所述焊球进行回流焊接,以使所述焊球熔化并互连以形成连接层; 将顶部基板连接到底部基板,其中底部基板的批次被顶部基板密封以形成用于容纳电子设备的中空室。

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