公开(公告)号：US20200295123A1

公开(公告)日：2020-09-17

申请号：US16885461

申请日：2020-05-28

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Cheng-Hung Shih ,  Nian-Cih Yang ,  Yi-Cheng Chen ,  Shang-Jan Yang

IPC: H01L49/02 ,  H01L23/64

Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.

公开(公告)号：US20200266262A1

公开(公告)日：2020-08-20

申请号：US16401736

申请日：2019-05-02

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Cheng-Hung Shih ,  Nian-Cih Yang ,  Yi-Cheng Chen ,  Shang-Jan Yang

IPC: H01L49/02 ,  H01L23/64

Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.

公开(公告)号：US11056555B2

公开(公告)日：2021-07-06

申请号：US16885461

申请日：2020-05-28

Applicant: CHIPBOND TECHNOLOGY CORPORATION

Inventor： Cheng-Hung Shih ,  Nian-Cih Yang ,  Yi-Cheng Chen ,  Shang-Jan Yang

IPC: H01L29/00 ,  H01L49/02 ,  H01L23/64

Abstract: A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.