公开(公告)号：US20230345185A1

公开(公告)日：2023-10-26

申请号：US18163865

申请日：2023-02-02

Applicant: DB HiTek Co., Ltd.

Inventor： Seok Young LEE

IPC: H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00 ,  H04R7/04 ,  H04R7/18 ,  H04R19/00

CPC classification number: H04R19/04 ,  B81B3/001 ,  B81C1/00968 ,  H04R31/006 ,  H04R31/003 ,  H04R7/04 ,  H04R7/18 ,  H04R19/005 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/013 ,  H04R2201/003

Abstract: Provided is a MEMS microphone structure (1) and, more particularly, to a MEMS microphone structure (1) that ensures excellent sensitivity by including and/or forming a lower electrode (410) and an upper electrode (430) with a diaphragm (110) in a bending area (A1) so that the maximum bending displacement of the diaphragm (110) is controlled by a dielectrophoretic (DFP) force together with sound pressure.