公开(公告)号：US20150348858A1

公开(公告)日：2015-12-03

申请号：US14423821

申请日：2014-09-10

Applicant: DEXERIALS CORPORATION

Inventor： Taichi KOYAMA

IPC: H01L23/29 ,  H01L23/00 ,  C08J5/18 ,  H01L21/56

CPC classification number: H01L23/293 ,  C08G59/4284 ,  C08J5/18 ,  C08J2333/16 ,  C08J2363/02 ,  C08J2433/16 ,  C08J2463/02 ,  C08L63/00 ,  C09J133/04 ,  C09J163/08 ,  H01L21/563 ,  H01L21/6836 ,  H01L24/81 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/83191 ,  H01L2924/00011 ,  H01L2924/01322 ,  H01L2924/06 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/186 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/00 ,  H01L2224/81805 ,  C08L33/00

Abstract: An underfill material enabling voidless packaging and excellent solder bonding properties, and a method for manufacturing a semiconductor device using the same are provided. An underfill material, including an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, the minimum melt viscosity being between 1000 Pa*s and 2000 Pa*s, and gradient of melt viscosity between 10° C. higher than the minimum melt viscosity attainment temperature and a temperature 10° C. higher being between 900 Pa*s/° C. and 3100 Pa*s/° C., is applied to a semiconductor chip having a solder-tipped electrode formed thereon, and the semiconductor chip is mounted onto a circuit substrate having a counter electrode opposing the solder-tipped electrode, and the semiconductor chip and the circuit substrate are thermocompressed under bonding conditions of raising the temperature from a first temperature to a second temperature at a predetermined rate.

Abstract translation: 提供了能够实现无空隙封装和优异的焊接接合性能的底部填充材料，以及制造使用其的半导体器件的方法。 包括环氧树脂，酸酐，丙烯酸树脂和有机过氧化物的底部填充材料的最低熔体粘度在1000Pa·s和2000Pa·s之间，熔体粘度梯度高于10℃ 将最低熔融粘度达到温度和10℃之间的温度提高至900Pa·s /℃和3100Pa·s /℃之间的温度施加到其上形成有焊料尖端电极的半导体芯片，以及 将半导体芯片安装到具有与焊料尖端电极相对的对置电极的电路基板上，并且在以预定速率将温度从第一温度升高到第二温度的接合条件下，将半导体芯片和电路基板热压。

公开(公告)号：US20130224913A1

公开(公告)日：2013-08-29

申请号：US13770289

申请日：2013-02-19

Applicant: DEXERIALS CORPORATION

Inventor： Taichi KOYAMA

IPC: C08L53/00 ,  H01L21/56 ,  C08L63/00

CPC classification number: H01L21/563 ,  C08G59/42 ,  C08G2261/126 ,  C08L29/02 ,  C08L29/14 ,  C08L33/08 ,  C08L33/10 ,  C08L53/00 ,  C08L63/00 ,  C08L67/02 ,  C08L75/04 ,  C08L75/06 ,  C08L75/08 ,  H01L21/56 ,  H01L23/293 ,  H01L24/81 ,  H01L2224/81091 ,  H01L2224/81815 ,  H01L2924/0002 ,  C08L29/10 ,  H01L2924/00

Abstract: Provided is an underfill material which enables a semiconductor chip to be mounted at a low pressure, and a method for manufacturing a semiconductor device by using the underfill material. The method comprises: a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent; and a reflow step configured to solder-bond the semiconductor chip and the substrate by a reflow furnace. The film forming resin of the underfill material has a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, and accordingly, the viscosity at the time of heat melting can be reduced, and a semiconductor chip can be mounted at a low pressure.

Abstract translation: 提供了使半导体芯片能够以低压安装的底部填充材料，以及通过使用底部填充材料制造半导体器件的方法。 该方法包括：半导体芯片安装步骤，被配置为通过底片填充膜将具有焊料凸块的半导体芯片安装在基底上，所述底部填充膜包括重均分子量不大于30000g / mol的成膜树脂和分子量分布 不大于2.0，环氧树脂和环氧固化剂; 以及回流工序，被配置为通过回流炉焊接所述半导体芯片和所述衬底。 底部填充材料的成膜树脂的重均分子量不大于30000g / mol，分子量分布不大于2.0，因此可以降低热熔融时的粘度，并且 半导体芯片可以安装在低压下。

公开(公告)号：US20160194531A1

公开(公告)日：2016-07-07

申请号：US14916490

申请日：2014-09-09

Applicant: DEXERIALS CORPORATION

Inventor： Masaharu AOKI ,  Shiyuki KANISAWA ,  Hidetsugu NAMIKI ,  Taichi KOYAMA ,  Akira ISHIGAMI

IPC: C09J133/20 ,  C09J9/02 ,  H01L33/62

CPC classification number: C09J133/20 ,  C08F220/18 ,  C08L33/066 ,  C08L33/068 ,  C08L2205/22 ,  C09J9/02 ,  C09J133/066 ,  C09J163/00 ,  H01B1/22 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/16227 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29388 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/294 ,  H01L2224/32225 ,  H01L2224/81424 ,  H01L2224/81487 ,  H01L2224/81903 ,  H01L2224/83424 ,  H01L2224/83487 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2924/07811 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/01006 ,  H01L2924/0543 ,  H01L2924/01049 ,  H01L2924/0544 ,  H01L2924/0105 ,  C08F2220/1825 ,  C08F2220/1808 ,  C08F220/44 ,  C08F220/06 ,  C08F220/20 ,  C08K5/151

Abstract: This adhesive contains an epoxy compound, a cationic catalyst, and an acrylic resin that includes acrylic acid and an acrylic acid ester having a hydroxyl group. The acrylic acid in the acrylic resin reacts with the epoxy compound, creating a link between the acrylic resin island part and the epoxy compound sea part, and strengthening the anchoring effect with respect to the epoxy compound sea part by roughening the surface of an oxide film. Furthermore, the hydroxyl-group-containing acrylic acid ester in the acrylic resin becomes electrostatically adhesive to wiring due to the polarity of the hydroxyl group. Excellent adhesive strength can be obtained by adhering, in this way, the entire cured product composed of the acrylic resin island part and the epoxy compound sea part to the oxide film.

Abstract translation: 该粘合剂包含环氧化合物，阳离子催化剂和丙烯酸树脂，其包括丙烯酸和具有羟基的丙烯酸酯。 丙烯酸树脂中的丙烯酸与环氧化合物反应，产生丙烯酸树脂岛部分和环氧化合物海部之间的连接，并通过使氧化膜的表面粗糙化来增强相对于环氧化合物海部的锚固效果 。 此外，由于羟基的极性，丙烯酸树脂中的含羟基的丙烯酸酯与布线成为静电粘合剂。 通过将由丙烯酸树脂岛部和环氧化合物海部构成的整个固化物以这种方式粘附到氧化膜，可以获得良好的粘合强度。

公开(公告)号：US20150079736A1

公开(公告)日：2015-03-19

申请号：US14547660

申请日：2014-11-19

Applicant: DEXERIALS CORPORATION

Inventor： Taichi KOYAMA

IPC: H01L21/56 ,  H01L23/00

CPC classification number: H01L21/563 ,  C08G59/42 ,  C08G2261/126 ,  C08L29/02 ,  C08L29/14 ,  C08L33/08 ,  C08L33/10 ,  C08L53/00 ,  C08L63/00 ,  C08L67/02 ,  C08L75/04 ,  C08L75/06 ,  C08L75/08 ,  H01L21/56 ,  H01L23/293 ,  H01L24/81 ,  H01L2224/81091 ,  H01L2224/81815 ,  H01L2924/0002 ,  C08L29/10 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device by using underfill material includes: a semiconductor chip mounting step configured to mount a semiconductor chip having a solder bump on a substrate via an underfill film including a film forming resin having a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, an epoxy resin, and an epoxy curing agent; and a reflow step configured to solder-bond the semiconductor chip and the substrate by a reflow furnace. The film forming resin of the underfill material has a weight average molecular weight of not more than 30000 g/mol and a molecular weight distribution of not more than 2.0, and accordingly, the viscosity at the time of heat melting can be reduced, and a semiconductor chip can be mounted at a low pressure.

Abstract translation: 通过使用底部填充材料制造半导体器件的方法包括：半导体芯片安装步骤，被配置为通过底片填充膜将具有焊料凸块的半导体芯片安装在基板上，所述底部填充膜包括重均分子量不大于 30000g / mol，分子量分布不超过2.0，环氧树脂和环氧固化剂; 以及回流工序，被配置为通过回流炉焊接所述半导体芯片和所述衬底。 底部填充材料的成膜树脂的重均分子量不大于30000g / mol，分子量分布不大于2.0，因此可以降低热熔融时的粘度，并且 半导体芯片可以安装在低压下。

公开(公告)号：US20160194517A1

公开(公告)日：2016-07-07

申请号：US14915734

申请日：2014-09-10

Applicant: DEXERIALS CORPORATION

Inventor： Takayuki SAITO ,  Taichi KOYAMA ,  Hironobu MORIYAMA

IPC: C09D163/00 ,  H01L23/29 ,  H01L23/31

CPC classification number: C09D163/00 ,  C08G59/42 ,  C08L63/00 ,  C09D133/066 ,  C09J133/04 ,  C09J133/066 ,  C09J163/08 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3142 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81191 ,  H01L2224/81204 ,  H01L2224/81444 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/05442 ,  H01L2924/05341 ,  H01L2924/0549 ,  H01L2924/0532 ,  H01L2924/0102 ,  H01L2924/0544 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L21/78 ,  C08K5/14 ,  C08L33/10

Abstract: An underfill material achieving a wide margin for mounting and a method for manufacturing a semiconductor device using the same are provided. The underfill material contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, wherein a minimum melt viscosity attainment temperature and a minimum melt viscosity obtained when melt viscosity of the underfill material is measured under a temperature increase rate condition in a range of 5 to 50° C./min are in a range of 100° C. to 150° C. and in a range of 100 to 5000 Pa·s, respectively. Since variation in the minimum melt viscosity attainment temperature measured under different temperature increase conditions is small, voidless mounting and good solder bonding properties can be achieved without strict control on the temperature profile during thermocompression bonding, and a wide margin for mounting can be achieved.

Abstract translation: 提供了用于安装的宽裕度的底部填充材料和使用其的制造半导体器件的方法。 底部填充材料含有环氧树脂，酸酐，丙烯酸树脂和有机过氧化物，其中在底物填充材料的熔融粘度在温度升高速率条件下测定时获得的最小熔体粘度达到温度和最小熔体粘度 5〜50℃/分钟的范围分别为100〜150℃，范围为100〜5000Pa·s。 由于在不同温度升高条件下测量的最小熔融粘度达到温度的变化小，无需严格控制热压接温度分布，就可以实现无孔安装和良好的焊接性能，并且可以实现大的安装余地。

公开(公告)号：US20160017191A1

公开(公告)日：2016-01-21

申请号：US14423966

申请日：2014-09-10

Applicant: DEXERIALS CORPORATION

Inventor： Taichi KOYAMA

IPC: C09J163/00 ,  H01L23/00 ,  H01L23/29 ,  C09J133/20 ,  H01L21/56

CPC classification number: C09J163/00 ,  C08G59/4215 ,  C08L63/00 ,  C09D133/066 ,  C09J133/20 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/293 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2224/13025 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83204 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/9212 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/186 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05341 ,  H01L2924/0549 ,  H01L2924/0532 ,  H01L2924/0102 ,  H01L2924/0544 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2224/27 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/11 ,  H01L21/78 ,  C08L33/16

Abstract: An underfill film material and a method for manufacturing a semiconductor device using the same which enables voidless mounting and favorable solder bonding properties are provided. An underfill material is used which contains an epoxy resin, an acid anhydride, an acrylic resin and an organic peroxide, the underfill material exhibits non-Bingham fluidity at a temperature ranging from 60° C. to 100° C., a storage modulus G′ measured by dynamic viscosity measurement has an inflection point in an angular frequency region below 10E+02 rad/s, and the storage modulus G′ in the angular frequency below the inflection point is 10E+05 Pa or more and 10E+06 Pa or less. This enables voidless packaging and excellent solder connection properties.

Abstract translation: 提供了一种底部填充膜材料及其制造方法，该半导体器件使用该半导体器件能够实现无孔安装和良好的焊接接合性能。 使用含有环氧树脂，酸酐，丙烯酸树脂和有机过氧化物的底部填充材料，底部填充材料在60℃至100℃的温度范围内显示非Bingham流动性，储能模量G 通过动态粘度测量测量，在低于10E + 02rad / s的角频率区域中具有拐点，并且在拐点以下的角频率中的储能模量G'为10E + 05Pa以上且10E + 06Pa或 减。 这使得无孔封装和优异的焊接连接性能。