公开(公告)号：US12049684B2

公开(公告)日：2024-07-30

申请号：US18196614

申请日：2023-05-12

Applicant: Dowa Electronics Materials Co., Ltd.

Inventor： Masahiro Yoshida ,  Kenichi Inoue ,  Atsushi Ebara ,  Yoshiyuki Michiaki ,  Takahiro Yamada

IPC: B22F1/10 ,  B22F1/05 ,  B22F9/08 ,  C22C1/04 ,  H01B1/22 ,  B22F1/00

CPC classification number: C22C1/0425 ,  B22F1/05 ,  B22F1/10 ,  B22F9/082 ,  H01B1/22 ,  B22F1/09 ,  B22F2009/0828 ,  B22F2009/0832 ,  B22F2009/086 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2201/04 ,  B22F2201/11 ,  B22F2203/13 ,  B22F2301/10 ,  B22F2303/01 ,  B22F2304/10 ,  B22F2998/10 ,  B22F2999/00 ,  B22F1/10 ,  C22C1/0425 ,  B22F1/05

Abstract: There are provided an inexpensive copper powder, which has a low content of oxygen even it has a small particle diameter and which has a high shrinkage starting temperature when it is heated, and a method for producing the same. While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.

公开(公告)号：US20230279523A1

公开(公告)日：2023-09-07

申请号：US18196614

申请日：2023-05-12

Applicant: Dowa Electronics Materials Co., Ltd.

Inventor： Masahiro Yoshida ,  Kenichi Inoue ,  Atsushi Ebara ,  Yoshiyuki Michiaki ,  Takahiro Yamada

IPC: C22C1/04 ,  B22F9/08 ,  H01B1/22 ,  B22F1/10 ,  B22F1/05

CPC classification number: C22C1/0425 ,  B22F9/082 ,  H01B1/22 ,  B22F1/10 ,  B22F1/05 ,  B22F2009/0828 ,  B22F2009/0832 ,  B22F2009/086 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2201/04 ,  B22F2201/11 ,  B22F2203/13 ,  B22F2301/10 ,  B22F2303/01 ,  B22F2304/10 ,  B22F2998/10 ,  B22F1/09

Abstract: There are provided an inexpensive copper powder, which has a low content of oxygen even it has a small particle diameter and which has a high shrinkage starting temperature when it is heated, and a method for producing the same. While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.

公开(公告)号：US11692241B2

公开(公告)日：2023-07-04

申请号：US16473353

申请日：2017-12-21

Applicant: Dowa Electronics Materials Co., Ltd.

Inventor： Masahiro Yoshida ,  Kenichi Inoue ,  Atsushi Ebara ,  Yoshiyuki Michiaki ,  Takahiro Yamada

IPC: H01B1/22 ,  B22F1/10 ,  B22F9/08

CPC classification number: B22F9/082 ,  B22F1/10 ,  H01B1/22 ,  B22F2009/086 ,  B22F2009/0828 ,  B22F2009/0832 ,  B22F2201/013 ,  B22F2201/02 ,  B22F2201/04 ,  B22F2201/11 ,  B22F2203/13 ,  B22F2301/10 ,  B22F2303/01 ,  B22F2304/10 ,  B22F2998/10

Abstract: While a molten metal of copper heated to a temperature, which is higher than the melting point of copper by 250 to 700° C. (preferably 350 to 650° C. and more preferably 450 to 600° C.), is allowed to drop, a high-pressure water is sprayed onto the heated molten metal of copper in a non-oxidizing atmosphere (such as an atmosphere of nitrogen, argon, hydrogen or carbon monoxide) to rapidly cool and solidify the heated molten metal of copper to produce a copper powder which has an average particle diameter of 1 to 10 μm and a crystallite diameter Dx(200) of not less than 40 nm on (200) plane thereof, the content of oxygen in the copper powder being 0.7% by weight or less.

公开(公告)号：US11407030B2

公开(公告)日：2022-08-09

申请号：US17086552

申请日：2020-11-02

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Atsushi Ebara ,  Kenichi Inoue ,  Yoshiyuki Michiaki ,  Takahiro Yamada ,  Masahiro Yoshida

IPC: H01B1/02 ,  C09D5/24 ,  B22F9/08 ,  C22C5/06 ,  H01B1/22 ,  B22F1/00 ,  B22F1/05 ,  C09D7/40 ,  C08K3/08

Abstract: There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 μm and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 μm·% (preferably 1.5 to 10.5 μm·%).

公开(公告)号：US20210078081A1

公开(公告)日：2021-03-18

申请号：US17086552

申请日：2020-11-02

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Atsushi Ebara ,  Kenichi Inoue ,  Yoshiyuki Michiaki ,  Takahiro Yamada ,  Masahiro Yoshida

IPC: B22F9/08 ,  C22C5/06 ,  H01B1/22 ,  H01B1/02 ,  B22F1/00 ,  C09D7/40 ,  C09D5/24

Abstract: There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 μm and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 μm·% (preferably 1.5 to 10.5 μm·%).

公开(公告)号：US20180326497A1

公开(公告)日：2018-11-15

申请号：US15768065

申请日：2016-10-26

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Atsushi Ebara ,  Kenichi Inoue ,  Yoshiyuki Michiaki ,  Takahiro Yamada ,  Masahiro Yoshida

IPC: B22F9/08 ,  B22F1/00 ,  C09D5/24 ,  C09D7/40 ,  H01B1/22

CPC classification number: B22F9/082 ,  B22F1/0003 ,  B22F1/0011 ,  B22F2009/0828 ,  B22F2301/255 ,  B22F2304/10 ,  C08K2003/0806 ,  C08K2201/001 ,  C08K2201/005 ,  C08K2201/006 ,  C09D5/24 ,  C09D7/69 ,  C22C5/06 ,  H01B1/02 ,  H01B1/22

Abstract: There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 μm and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 μm·% (preferably 1.5 to 10.5 μm·%).

公开(公告)号：US10773311B2

公开(公告)日：2020-09-15

申请号：US15757427

申请日：2016-08-18

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Kenichi Inoue ,  Atsushi Ebara ,  Masahiro Yoshida ,  Kyoso Masuda ,  Takahiro Yamada ,  Shinichi Uchiyama

IPC: B32B5/16 ,  B22F9/08 ,  C22C9/00 ,  B22F1/00 ,  H01B1/02 ,  H01B1/06 ,  B22F1/02 ,  H01L23/00

Abstract: An object of the present invention is to provide a phosphorus-containing copper powder with good volume resistivity and a small carbon content by suppressing an oxygen content to a relatively low value even if a particle size is made small, and a method for producing the same. In the phosphorus-containing copper powder containing phosphorus, a ratio of an oxygen content (wt. %) to a BET specific surface area (m2/g) (oxygen content/BET specific surface area) is 0.90 wt. %·g/m2 or less, a divalent copper compound is present on a surface of particles constituting the phosphorus-containing copper powder, a carbon content is 0.10 wt. % or less, and D50 is 7.11 μm or less.

公开(公告)号：US11041229B2

公开(公告)日：2021-06-22

申请号：US16329069

申请日：2017-08-31

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Kyoso Masuda ,  Kenichi Inoue ,  Yuki Kaneshiro ,  Atsushi Ebara ,  Yoshiyuki Michiaki ,  Kozo Ogi ,  Takahiro Yamada ,  Masahiro Yoshida

IPC: B32B5/16 ,  C22C9/06 ,  B22F1/00 ,  H01G4/232 ,  H01B5/00 ,  H01B1/00 ,  C22C9/00 ,  H01G4/30 ,  C22C9/04 ,  B22F1/02 ,  H01B1/22 ,  H01G4/228 ,  H05K1/09

Abstract: An object of the present invention is to provide metal powder that can be used to form an external electrode, which is excellent in solder wettability and solder leach resistance while having a layer structure with fewer layers than in the related art and, furthermore, is excellent in electrical conductivity. This silver-coated alloy powder comprises a coating layer on a surface of an alloy core particle containing copper, nickel, zinc, and inevitable impurities, the coating layer containing silver.

公开(公告)号：US10828702B2

公开(公告)日：2020-11-10

申请号：US15768065

申请日：2016-10-26

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Atsushi Ebara ,  Kenichi Inoue ,  Yoshiyuki Michiaki ,  Takahiro Yamada ,  Masahiro Yoshida

IPC: H01B1/02 ,  B22F9/08 ,  C22C5/06 ,  H01B1/22 ,  B22F1/00 ,  C09D7/40 ,  C09D5/24 ,  C08K3/08

Abstract: There is provided a silver powder which has a small average particle diameter and a small thermal shrinkage percentage, and a method for producing the same. While a molten metal of silver heated to a temperature (1292 to 1692° C.), which is higher than the melting point (962° C.) of silver by 330 to 730° C., is allowed to drop, a high-pressure water is sprayed onto the molten metal of silver (preferably at a water pressure of 90 to 160 MPa) to rapidly cool and solidify the molten metal of silver to powderize silver to produce a silver powder which has an average particle diameter of 1 to 6 μm and a shrinkage percentage of not greater than 8% (preferably not greater than 7%) at 500° C., the product of the average particle diameter by the shrinkage percentage at 500° C. being 1 to 11 μm·% (preferably 1.5 to 10.5 μm·%).

公开(公告)号：US11420256B2

公开(公告)日：2022-08-23

申请号：US16648423

申请日：2018-09-18

Applicant: DOWA ELECTRONICS MATERIALS CO., LTD.

Inventor： Yoshiyuki Michiaki ,  Masahiro Yoshida ,  Kenichi Inoue

IPC: B22F1/10 ,  B22F9/08 ,  B22F1/05 ,  C22C5/08 ,  C23C2/28

Abstract: A silver powder which has a small content of carbon and which is difficult to be agglutinated, and a method for producing the same. While a molten metal, which is prepared by melting silver to which 40 ppm or more of copper is added, is allowed to drop, a high-pressure water is sprayed onto the molten metal to rapidly cool and solidify the molten metal to produce a silver powder which contains 40 ppm or more of copper, 0.1% by weight or less of carbon and 0.1% by weight or less of oxygen and wherein the particle diameter (D50 diameter) corresponding to 50% of accumulation in volume-based cumulative distribution of the silver powder, which is measured by means of a laser diffraction particle size analyzer, is in the range of from 1 μm to 15 μm, the average particle diameter (SEM diameter) of single particles being in the range of from 1 μm to 8 μm when it is measured by means of a field emission scanning electron microscope (SEM), the ratio (SEM diameter/D50 diameter) of the SEM diameter to the D50 diameter being in the range of from 0.3 to 1.0.