公开(公告)号：US20070257191A1

公开(公告)日：2007-11-08

申请号：US11779224

申请日：2007-07-17

Applicant: Alexander Kadyshevitch ,  Christopher Talbot ,  Dmitry Shur ,  Andreas Hegedus

Inventor： Alexander Kadyshevitch ,  Christopher Talbot ,  Dmitry Shur ,  Andreas Hegedus

IPC: G01N23/00

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US08546756B2

公开(公告)日：2013-10-01

申请号：US12864215

申请日：2009-01-22

Applicant: Dmitry Shur ,  Yaron Cohen

Inventor： Dmitry Shur ,  Yaron Cohen

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/244 ,  H01J37/263 ,  H01J37/265 ,  H01J37/3045 ,  H01J2237/24578 ,  H01J2237/2511 ,  H01J2237/2555 ,  H01J2237/30455

Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.

Abstract translation: 一种用于微观元素的材料分析的系统和方法，所述方法包括：通过带电粒子束照射包括所述微观元素的至少一部分的区域，检测在所述区域中响应于所述带电粒子产生的颗粒 并且分析检测到的颗粒以提供关于微观元件的材料特性的指示，其中照明的操作被实现为位移补偿确定周期的序列，每个位移补偿确定周期在连续的材料分析周期之间提供，该方法还包括在 位移补偿确定周期，相对于微观元件的带电粒子束的位移和在连续的材料分析周期期间根据需要应用空间调整度量，从而补偿带电粒子束的漂移。

公开(公告)号：US07381978B2

公开(公告)日：2008-06-03

申请号：US11051339

申请日：2005-02-03

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: H01J49/00

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US07038224B2

公开(公告)日：2006-05-02

申请号：US10434977

申请日：2003-05-09

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: G01R31/02

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

公开(公告)号：US07279689B2

公开(公告)日：2007-10-09

申请号：US11181659

申请日：2005-07-13

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: A61N5/00

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US20050173657A1

公开(公告)日：2005-08-11

申请号：US11051339

申请日：2005-02-03

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas Hegedus

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/66 ,  H01L23/544

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

公开(公告)号：US07473911B2

公开(公告)日：2009-01-06

申请号：US10695620

申请日：2003-10-27

Applicant: Alexander Kadyshevitch ,  Dror Shemesh ,  Yaniv Brami ,  Dmitry Shur

Inventor： Alexander Kadyshevitch ,  Dror Shemesh ,  Yaniv Brami ,  Dmitry Shur

IPC: H01J49/44

CPC classification number: H01L22/34 ,  H01J37/32935 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract translation: 一种用于过程监测的方法包括在第二层中产生接触开口之后，接收具有至少部分导电的第一层的样品和在第一层上形成的第二层。 带电粒子束沿着光束轴线被引导，所述光束轴线基本上偏离于与样品表面的法线的角度，以便照射分布在至少一个区域上的多个位置中的每一个中的一个或多个接触开口 的样品。 响应于多个位置中的每一个处的一个或多个接触开口的照射来测量流过第一层的样本电流。 产生至少样品区域的图，指示响应于多个位置处的照射测量的样本电流。

公开(公告)号：US20110024622A1

公开(公告)日：2011-02-03

申请号：US12864215

申请日：2009-01-22

Applicant: Dmitry Shur

Inventor： Dmitry Shur

IPC: H01J37/26 ,  G01N23/00

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/244 ,  H01J37/263 ,  H01J37/265 ,  H01J37/3045 ,  H01J2237/24578 ,  H01J2237/2511 ,  H01J2237/2555 ,  H01J2237/30455

Abstract: A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.

Abstract translation: 一种用于微观元素的材料分析的系统和方法，所述方法包括：通过带电粒子束照射包括所述微观元素的至少一部分的区域，检测在所述区域中响应于所述带电粒子产生的颗粒 并且分析检测到的颗粒以提供关于微观元件的材料特性的指示，其中照明的操作被实现为位移补偿确定周期的序列，每个位移补偿确定周期在连续的材料分析周期之间提供，该方法还包括在 位移补偿确定周期，相对于微观元件的带电粒子束的位移和在连续的材料分析周期期间根据需要应用空间调整度量，从而补偿带电粒子束的漂移。

公开(公告)号：US07602197B2

公开(公告)日：2009-10-13

申请号：US10560205

申请日：2004-06-07

Applicant: Alexander Kadyshevitch ,  Dmitry Shur ,  Christopher Talbot

Inventor： Alexander Kadyshevitch ,  Dmitry Shur ,  Christopher Talbot

IPC: G01R31/00 ,  G01R31/307

CPC classification number: G01R31/2831 ,  G01R31/307

Abstract: A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.

Abstract translation: 一种用于晶片检查的方法和装置。 该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束 源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响​​应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

公开(公告)号：US07476875B2

公开(公告)日：2009-01-13

申请号：US11779224

申请日：2007-07-17

Applicant: Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

Inventor： Alexander Kadyshevitch ,  Chris Talbot ,  Dmitry Shur ,  Andreas G. Hegedus

IPC: H01J49/00 ,  A61N5/00

CPC classification number: H01J37/32935 ,  G01N23/00 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/34 ,  H01L2924/3011

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract translation: 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。