Abstract:
An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams.
Abstract:
In systems where insulating deposits form during normal operation, electrodes are configured with a preformed dielectric thereon, wherein the preformed dielectric is formed with a geometric feature that preforms a triple junction. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.
Abstract:
In systems where insulating deposits form during normal operation, electrodes are configured so the deposits have the effect of creating in-situ triple junctions. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.