公开(公告)号：US20220298629A1

公开(公告)日：2022-09-22

申请号：US17829007

申请日：2022-05-31

Applicant: ENTEGRIS, INC.

Inventor： David James Eldridge ,  David Peters ,  Robert Wright, JR. ,  Bryan C. Hendrix ,  Scott L. Battle, JR. ,  John Gregg

IPC: C23C16/448 ,  C23C16/52 ,  C23C16/455

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

公开(公告)号：US20240035157A1

公开(公告)日：2024-02-01

申请号：US18229077

申请日：2023-08-01

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, JR. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/56 ,  C23C16/18

CPC classification number: C23C16/45534 ,  H01L21/0228 ,  C23C16/56 ,  C23C16/18

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US20240123391A1

公开(公告)日：2024-04-18

申请号：US18376471

申请日：2023-10-04

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, JR. ,  Bryan Hendrix ,  Loren Press ,  Benjamin Garrett

IPC: B01D53/00 ,  C01G41/04

CPC classification number: B01D53/002 ,  C01G41/04

Abstract: Tungsten precursors with high purity and methods for purifying tungsten precursors are provided. The method for purifying a precursor may comprise at least one of the following steps: obtaining a source vessel containing WCl4, WOCl4, and one of WCl5 or WCl6; separating the WCl5 or the WCl6 from at least a first portion of the WOCl4; separating the WCl5 or the WCl6 from at least a second portion of the WOCl4; recovering a precursor in a collection vessel; or any combination thereof.

公开(公告)号：US20220259236A1

公开(公告)日：2022-08-18

申请号：US17736855

申请日：2022-05-04

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum ,  Robert Wright, JR.

IPC: C07F11/00 ,  H01L21/3205 ,  H01L21/02

Abstract: The invention provides a facile process for preparing various Group VI precursor compounds useful in the vapor deposition of such Group VI metals onto solid substrates, especially microelectronic semiconductor device substrates. The process provides an effective means to obtain such volatile materials, which can then be sources of molybdenum, chromium, or tungsten-containing materials to be deposited on such substrates. Additionally, the invention provides a method for vapor deposition of such compounds onto microelectronic device substrates.

公开(公告)号：US20190226086A1

公开(公告)日：2019-07-25

申请号：US16245791

申请日：2019-01-11

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, JR. ,  Shuang MENG ,  Bryan C. HENDRIX ,  Thomas H. BAUM ,  Philip S.H. CHEN

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/32

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.