公开(公告)号：US11492364B2

公开(公告)日：2022-11-08

申请号：US16836444

申请日：2020-03-31

Applicant: ENTEGRIS, INC.

Inventor： Manish Khandelwal ,  Thomas H. Baum

IPC: C07F7/10 ,  B05D1/00

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

公开(公告)号：US11312739B2

公开(公告)日：2022-04-26

申请号：US16838694

申请日：2020-04-02

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Manish Khandelwal ,  David Kuiper

IPC: C07F13/00 ,  C07F7/10 ,  B01D3/10

Abstract: Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula: SiI4+z(NH2R1)═SiIy(NHR1)z, wherein R1 is selected from a C1-C10 alkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4−y.

公开(公告)号：US10988490B1

公开(公告)日：2021-04-27

申请号：US16592478

申请日：2019-10-03

Applicant: ENTEGRIS, INC.

Inventor： Manish Khandelwal ,  David Kuiper ,  Thomas H. Baum

IPC: C07F7/00 ,  C07F7/02 ,  H01L21/02

Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

公开(公告)号：US11203604B2

公开(公告)日：2021-12-21

申请号：US16706347

申请日：2019-12-06

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  Manish Khandelwal ,  Thomas M. Cameron ,  Thomas H. Baum ,  John Cleary

IPC: C07F7/08

Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.