公开(公告)号：US11063087B2

公开(公告)日：2021-07-13

申请号：US16510388

申请日：2019-07-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  I-Lun Ma ,  Bo-Jiun Hu ,  Yu-Ling Lin ,  Chien-Chih Liao

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/12

Abstract: A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US10804435B2

公开(公告)日：2020-10-13

申请号：US15686314

申请日：2017-08-25

Applicant: EPISTAR CORPORATION

Inventor： Chang-Tai Hisao ,  I-Lun Ma ,  Hao-Yu Chen ,  Shu-Fen Hu ,  Ru-Shi Liu ,  Chih-Ming Wang ,  Chun-Yuan Chen ,  Yih-Hua Renn ,  Chien-Hsin Wang ,  Yung-Hsiang Lin

IPC: H01L33/42 ,  H01L33/32 ,  H01L33/06 ,  H01L33/44 ,  F21K9/232 ,  F21V29/77 ,  F21V5/04 ,  F21K9/238 ,  F21K9/237 ,  F21Y115/10

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

公开(公告)号：US11799060B2

公开(公告)日：2023-10-24

申请号：US18113344

申请日：2023-02-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/46 ,  H01L33/00

CPC classification number: H01L33/385 ,  H01L25/0753 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/46

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US11621374B2

公开(公告)日：2023-04-04

申请号：US17321078

申请日：2021-05-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

IPC: H01L33/00 ,  H01L31/0232 ,  H01L21/00 ,  H01L33/38 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US11038085B2

公开(公告)日：2021-06-15

申请号：US16529370

申请日：2019-08-01

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

IPC: H01L33/00 ,  H01L31/0232 ,  H01L21/00 ,  H01L33/38 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US12283606B2

公开(公告)日：2025-04-22

申请号：US18442843

申请日：2024-02-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  I-Lun Ma ,  Bo-Jiun Hu ,  Yu-Ling Lin ,  Chien-Chih Liao

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/00 ,  H01L33/12 ,  H01L33/30 ,  H01L33/42

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US12230744B2

公开(公告)日：2025-02-18

申请号：US18370649

申请日：2023-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Cheng-Lin Lu ,  Chih-Hao Chen ,  Chi-Shiang Hsu ,  I-Lun Ma ,  Meng-Hsiang Hong ,  Hsin-Ying Wang ,  Kuo-Ching Hung ,  Yi-Hung Lin

IPC: H01L33/54 ,  H01L25/075 ,  H01L33/00 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US11942509B2

公开(公告)日：2024-03-26

申请号：US17348080

申请日：2021-06-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  I-Lun Ma ,  Bo-Jiun Hu ,  Yu-Ling Lin ,  Chien-Chih Liao

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/00 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L33/24 ,  H01L33/385 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/12 ,  H01L33/30 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.