公开(公告)号：US12002904B2

公开(公告)日：2024-06-04

申请号：US17241958

申请日：2021-04-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Chien-Chih Liao ,  Wen-Hung Chuang ,  Min-Yen Tsai ,  Bo-Jiun Hu

IPC: H01L23/00 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L23/562 ,  H01L33/02 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.

公开(公告)号：US11990575B2

公开(公告)日：2024-05-21

申请号：US18205920

申请日：2023-06-05

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56 ,  H01L33/00 ,  H01L33/22

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

公开(公告)号：US11063087B2

公开(公告)日：2021-07-13

申请号：US16510388

申请日：2019-07-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  I-Lun Ma ,  Bo-Jiun Hu ,  Yu-Ling Lin ,  Chien-Chih Liao

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/30 ,  H01L33/12

Abstract: A light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a trench formed between the first light-emitting unit and the second light-emitting unit, and exposing the substrate; and a connecting electrode including a first connecting part on the first light-emitting unit and connected to the first semiconductor layer of the first light-emitting unit, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US12155019B2

公开(公告)日：2024-11-26

申请号：US18230119

申请日：2023-08-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US11908975B2

公开(公告)日：2024-02-20

申请号：US17228602

申请日：2021-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Chien-Chih Liao ,  Tzu-Yao Tseng ,  Tsun-Kai Ko ,  Chien-Fu Shen

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405

Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.

公开(公告)号：US11757077B2

公开(公告)日：2023-09-12

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying Wang ,  Chih-Hao Chen ,  Chien-Chih Liao ,  Chao-Hsing Chen ,  Wu-Tsung Lo ,  Tsun-Kai Ko ,  Chen Ou

IPC: H01L33/60 ,  H01L33/56 ,  H01L33/54 ,  H01L33/46 ,  H01L33/38 ,  H01L21/78

CPC classification number: H01L33/60 ,  H01L21/78 ,  H01L33/38 ,  H01L33/46 ,  H01L33/54 ,  H01L33/56

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US11575070B2

公开(公告)日：2023-02-07

申请号：US17496155

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US11973164B2

公开(公告)日：2024-04-30

申请号：US18092578

申请日：2023-01-03

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/08 ,  H01L33/10 ,  H01L33/38

CPC classification number: H01L33/08 ,  H01L33/10 ,  H01L33/385

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US20220029054A1

公开(公告)日：2022-01-27

申请号：US17496155

申请日：2021-10-07

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/08 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.

公开(公告)号：US11145789B2

公开(公告)日：2021-10-12

申请号：US16673008

申请日：2019-11-04

Applicant: EPISTAR CORPORATION

Inventor： Che-Hung Lin ,  Chien-Chih Liao ,  Chi-Shiang Hsu ,  De-Shan Kuo ,  Chao-Hsing Chen

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10 ,  H01L33/38

Abstract: A light-emitting device includes a substrate including a top surface; a semiconductor stack including a first semiconductor layer, an active layer and a second semiconductor layer formed on the substrate, wherein a portion of the top surface is exposed; a distributed Bragg reflector (DBR) formed on the semiconductor stack and contacting the portion of the top surface of the substrate; a metal layer formed on the distributed Bragg reflector (DBR), contacting the portion of the top surface of the substrate and being insulated with the semiconductor stack; and an insulation layer formed on the metal layer and contacting the portion of the top surface of the substrate.