公开(公告)号：US11121285B2

公开(公告)日：2021-09-14

申请号：US16680207

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Hui-Fang Kao ,  Yi-Tang Lai ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei Chun Liu ,  Yao-Ru Chang ,  Yi Hisao

IPC: H01L33/14 ,  H01L33/40 ,  H01L25/075

Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.