公开(公告)号：US11935981B2

公开(公告)日：2024-03-19

申请号：US17364175

申请日：2021-06-30

Applicant: EPISTAR CORPORATION

Inventor： Chu-Jih Su ,  Chia-Hsiang Chou ,  Wei-Chih Peng ,  Wen-Luh Liao ,  Chao-Shun Huang ,  Hsuan-Le Lin ,  Shih-Chang Lee ,  Mei Chun Liu ,  Chen Ou

IPC: H01L31/055 ,  H01L25/16 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/101 ,  H01L31/12

CPC classification number: H01L31/055 ,  H01L25/167 ,  H01L31/022408 ,  H01L31/03046 ,  H01L31/101 ,  H01L31/125

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US11121285B2

公开(公告)日：2021-09-14

申请号：US16680207

申请日：2019-11-11

Applicant: EPISTAR CORPORATION

Inventor： Yung-Fu Chang ,  Hui-Fang Kao ,  Yi-Tang Lai ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei Chun Liu ,  Yao-Ru Chang ,  Yi Hisao

IPC: H01L33/14 ,  H01L33/40 ,  H01L25/075

Abstract: A semiconductor device includes a conductive layer, a semiconductor stack, a first contact structure, an intermediate structure, a second contact structure, a first electrode and a second electrode. The semiconductor stack is disposed on the conductive layer. The first contact structure is disposed on the semiconductor stack. The intermediate structure encloses the first contact structure. The second contact structure is between the conductive layer and the semiconductor stack. The first electrode is on the conductive layer and separated from the semiconductor stack. The second electrode is on the intermediate structure.