公开(公告)号：US12040196B2

公开(公告)日：2024-07-16

申请号：US17578903

申请日：2022-01-19

Applicant: FEI Company

Inventor： James Clarke ,  Micah LeDoux ,  Jason Lee Monfort ,  Brett Avedisian

IPC: G01N1/32 ,  G11C5/02 ,  G11C5/06 ,  H01J37/305 ,  H01L21/3213 ,  H01L21/67 ,  H10B41/27 ,  H10B43/27

CPC classification number: H01L21/32131 ,  G01N1/32 ,  G11C5/025 ,  G11C5/06 ,  H01J37/3056 ,  H01L21/67069 ,  H10B41/27 ,  H10B43/27

Abstract: Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

公开(公告)号：US11069509B1

公开(公告)日：2021-07-20

申请号：US16819945

申请日：2020-03-16

Applicant: FEI Company

Inventor： James Clarke ,  Brian Routh, Jr. ,  Micah LeDoux ,  Cliff Bugge

IPC: H01J37/304 ,  H01J37/305 ,  G01N1/32 ,  G01N23/2202 ,  H01J37/22 ,  H01J37/28 ,  G01N23/2251

Abstract: The backside of a planar view lamella is prepared from a sample extracted from a workpiece. The sample includes multiple device layers and a substrate layer. After removing at least a part of the substrate layer covering a final device layer to obtain a sample surface, a region of interest (ROI) relative to the sample surface is alternately scanned with an electron beam and spontaneously etched until the final device layer within the ROI is exposed. One or more device layers may be removed from the sample backside after the final device layer is exposed to obtain the backside of the planar view lamella.

公开(公告)号：US20220139722A1

公开(公告)日：2022-05-05

申请号：US17578903

申请日：2022-01-19

Applicant: FEI Company

Inventor： James Clarke ,  Micah LeDoux ,  Jason Lee Monfort ,  Brett Avedisian

IPC: H01L21/3213 ,  H01L27/11582 ,  G11C5/02 ,  H01L27/11556 ,  H01J37/305 ,  H01L21/67 ,  G11C5/06 ,  G01N1/32

Abstract: Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

公开(公告)号：US11257683B2

公开(公告)日：2022-02-22

申请号：US16903922

申请日：2020-06-17

Applicant: FEI Company

Inventor： James Clarke ,  Micah LeDoux ,  Jason Lee Monfort ,  Brett Avedisian

IPC: H01L21/32 ,  H01L21/3213 ,  H01L27/11582 ,  G11C5/02 ,  H01L27/11556 ,  H01J37/305 ,  H01L21/67 ,  G11C5/06 ,  G01N1/32

Abstract: Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.