公开(公告)号：US20200319551A1

公开(公告)日：2020-10-08

申请号：US16905566

申请日：2020-06-18

Applicant: FUJIFILM Corporation

Inventor： Tomotaka Tsuchimura ,  Takashi Kawashima ,  Akihiro Kaneko ,  Michihiro Ogawa ,  Michihiro Shirakawa ,  Hajime Furutani ,  Kyohei Sakita

IPC: G03F7/004 ,  G03F1/22 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  C08F220/18 ,  C08F220/28 ,  C08F212/14

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin X having a repeating unit A represented by General Formula (I), a repeating unit B having an acid-decomposable group, and a repeating unit C selected from a repeating unit c1 represented by General Formula (II) and the like; a compound Y which is a basic compound or ammonium salt compound whose basicity is reduced upon irradiation with actinic rays or radiation; and a photoacid generator Z which is a compound other than the compound Y.

公开(公告)号：US10761424B2

公开(公告)日：2020-09-01

申请号：US16110394

申请日：2018-08-23

Applicant: FUJIFILM Corporation

Inventor： Ryo Nishio ,  Masafumi Kojima ,  Akiyoshi Goto ,  Tomotaka Tsuchimura ,  Michihiro Shirakawa ,  Keita Kato

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  C07C309/12 ,  C07C309/17 ,  C07C381/12 ,  C07C309/15 ,  C07C321/28 ,  C07D213/70 ,  C07D217/08 ,  C07D327/08 ,  C07D333/46 ,  C07D335/16 ,  C07J31/00 ,  C07J9/00 ,  C07J43/00

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is capable of forming a pattern having a low LWR and is further suppressed in the collapse of the formed pattern, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention contains a photoacid generator represented by General Formula (1) or a resin having a residue obtained by removing one hydrogen atom from the photoacid generator represented by General Formula (1).

公开(公告)号：US09718901B2

公开(公告)日：2017-08-01

申请号：US14586129

申请日：2014-12-30

Applicant: FUJIFILM Corporation

Inventor： Takuya Tsuruta ,  Tomotaka Tsuchimura ,  Kaoru Iwato

IPC: G03F7/039 ,  G03F7/038 ,  G03F7/20 ,  C08F12/24 ,  C08F12/32 ,  C08F16/12 ,  C08F16/26 ,  C08F212/14 ,  G03F7/004 ,  C08F8/02

CPC classification number: C08F12/24 ,  C08F8/02 ,  C08F12/32 ,  C08F212/14 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/20 ,  C08F212/32 ,  C08F212/08 ,  C08F220/32 ,  C08F220/36

Abstract: A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R1 represents a hydrogen atom, a methyl group, or a halogen atom; R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.

公开(公告)号：US09632410B2

公开(公告)日：2017-04-25

申请号：US14868409

申请日：2015-09-29

Applicant: FUJIFILM Corporation

Inventor： Shuhei Yamaguchi ,  Toru Tsuchihashi ,  Tomotaka Tsuchimura

IPC: G03F7/039 ,  G03F1/50 ,  G03F1/76 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/039 ,  G03F1/50 ,  G03F1/76 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2004 ,  G03F7/2039 ,  G03F7/2059 ,  G03F7/32

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) containing a repeating unit represented by a specific formula (1), and an ionic compound (B) represented by a specific formula (2), a resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method including: (a) a step of forming the resist film, (b) a step of exposing the film, and (c) a step of developing the exposed film using a developer to form a pattern.

公开(公告)号：US09488911B2

公开(公告)日：2016-11-08

申请号：US14831801

申请日：2015-08-20

Applicant: FUJIFILM Corporation

Inventor： Tomotaka Tsuchimura ,  Kyouhei Sakita

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/039 ,  G03F7/038 ,  C07D277/64 ,  C07D277/84 ,  C07D413/12

CPC classification number: G03F7/0045 ,  C07D277/64 ,  C07D277/84 ,  C07D413/12 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0387 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: There is provided a photosensitive composition containing a compound represented by Formula (I), and the Formula (I) is defined as herein, and chemical amplification resist composition containing the photosensitive composition, wherein the photosensitive composition further contains a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and a chemical amplification resist composition containing the photosensitive composition, wherein the photosensitive composition further contains a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

公开(公告)号：US09069246B2

公开(公告)日：2015-06-30

申请号：US14458660

申请日：2014-08-13

Applicant: FUJIFILM CORPORATION

Inventor： Hiroo Takizawa ,  Tomotaka Tsuchimura

IPC: G03F7/004 ,  G03F7/027 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/027 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0397

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the formula (Z1), and the formula (Z1) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method comprising a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, a step of exposing the film, and a step of developing the exposed film, a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the method for manufacturing an electronic device.

Abstract translation: 如式（Z1）和式（Z1）所示，含有能够通过用光化学射线或辐射照射产生酸的化合物的光化射线敏感或辐射敏感性树脂组合物如本文所定义，并且抗蚀剂 使用光化射线敏感性或辐射敏感性树脂组合物形成的膜，图案形成方法，包括通过使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，曝光所述膜的步骤，以及步骤 显影曝光胶片，制造电子装置的方法，包括图形形成方法，以及通过该电子装置的制造方法制造的电子装置。

公开(公告)号：US11604414B2

公开(公告)日：2023-03-14

申请号：US16655447

申请日：2019-10-17

Applicant: FUJIFILM Corporation

Inventor： Michihiro Shirakawa ,  Hajime Furutani ,  Mitsuhiro Fujita ,  Tomotaka Tsuchimura ,  Takashi Kawashima ,  Michihiro Ogawa ,  Akihiro Kaneko ,  Hironori Oka ,  Yasuharu Shiraishi

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.

公开(公告)号：US09829796B2

公开(公告)日：2017-11-28

申请号：US15011863

申请日：2016-02-01

Applicant: FUJIFILM Corporation

Inventor： Hiroo Takizawa ,  Takuya Tsuruta ,  Tomotaka Tsuchimura

IPC: G03F7/32 ,  G03F7/039 ,  G03F7/038 ,  G03F7/004 ,  G03F7/20 ,  C08F12/32 ,  C08F12/22

CPC classification number: G03F7/325 ,  C08F12/22 ,  C08F12/32 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2004 ,  G03F7/2059

Abstract: There are provided A pattern formation method, including: (1) forming a film using an active light-sensitive or radiation-sensitive resin composition; (2) exposing the film to active light or radiation; and (3) developing the exposed film using a developer including an organic solvent, wherein the active light-sensitive or radiation-sensitive resin composition contains a resin (A) having specific 3 repeating units.

公开(公告)号：US09625813B2

公开(公告)日：2017-04-18

申请号：US13943062

申请日：2013-07-16

Applicant: FUJIFILM Corporation

Inventor： Tomotaka Tsuchimura ,  Tadateru Yatsuo

IPC: G03F7/004 ,  G03F7/38 ,  C08F257/00 ,  G03F1/20 ,  G03F7/038 ,  C08F12/24 ,  C08F212/14 ,  C09D125/18 ,  C08K5/19 ,  G03F1/22 ,  G03F7/20 ,  G03F7/039 ,  G03F1/56 ,  G03F1/76

CPC classification number: G03F7/0382 ,  C08F12/24 ,  C08F212/14 ,  C08F257/00 ,  C08K5/19 ,  C09D125/18 ,  G03F1/20 ,  G03F1/22 ,  G03F1/56 ,  G03F1/76 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2037 ,  G03F7/2039 ,  C08F212/32 ,  C08L25/18 ,  C08F2220/185 ,  C08F220/42

Abstract: A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

公开(公告)号：US09285679B2

公开(公告)日：2016-03-15

申请号：US14497560

申请日：2014-09-26

Applicant: FUJIFILM CORPORATION

Inventor： Tomotaka Tsuchimura ,  Takuya Tsuruta ,  Takeshi Inasaki ,  Koutarou Takahashi

IPC: G03F7/039 ,  G03F7/028 ,  G03F7/027 ,  C08F12/24 ,  G03F7/004 ,  G03F7/038 ,  G03F1/00 ,  G03F1/20 ,  G03F1/22 ,  G03F7/20 ,  C08F12/22 ,  C08F12/26 ,  C08F12/30 ,  C08F12/32 ,  C08F212/14 ,  C09D125/18

CPC classification number: G03F7/027 ,  C08F12/22 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F12/32 ,  C08F212/14 ,  C09D125/18 ,  G03F1/00 ,  G03F1/20 ,  G03F1/22 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/2037 ,  G03F7/2039 ,  C08F212/32 ,  C08F212/08

Abstract: There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.

Abstract translation: 提供了一种光化射线敏感或辐射敏感性组合物，其包含（α）由式（αI）表示的化合物，其能够产生体积为200或更大的酸的量（＆bgr） 在用光化射线或辐射照射时产生酸，并且式（αI）如本文所定义，并且使用光化射线敏感或辐射敏感组合物形成的抗蚀剂膜，涂覆有抗蚀剂的抗蚀剂涂覆的掩模毛坯 膜，抗蚀剂图案形成方法，包括曝光抗蚀剂膜和显影曝光的膜，通过曝光和显影抗蚀剂涂覆的掩模毛坯获得的光掩模，电子器件的制造方法，包括抗蚀剂图案形成方法和电子器件 通过电子设备的制造方法制造。