公开(公告)号：US20160157373A1

公开(公告)日：2016-06-02

申请号：US15016915

申请日：2016-02-05

Applicant: FUJITSU LIMITED

Inventor： Satoshi MASUDA

IPC: H05K7/02

CPC classification number: H05K7/026 ,  H01L23/045 ,  H01L23/047 ,  H01L23/3677 ,  H01L23/49833 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/06181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2924/00014 ,  H01L2924/16195 ,  H01L2924/1627 ,  H01L2924/19107 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/0215 ,  H05K3/4697 ,  H05K7/20509 ,  H05K9/0039 ,  H05K2201/0919 ,  H05K2201/09845 ,  H05K2201/10242 ,  H05K2201/10371 ,  H05K2201/1056 ,  H01L2224/45099

Abstract: A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member, a semiconductor device mounted on an upper face of the upper substrate, a first ground line connected to the semiconductor device and formed on the upper substrate, and a ground metal part connected to the base metal part and disposed in the lower base member, wherein the ground metal part is connected to the first ground line on the upper substrate.

Abstract translation: 高频模块包括下基部件，其具有形成在其上表面中的凹部，并且具有形成在其下表面上的待接地的基底金属部分，设置在下部的凹部内的上基板 基底构件，安装在上基板的上表面上的半导体器件，连接到半导体器件并形成在上基板上的第一接地线，以及连接到基底金属部分并设置在下基底构件中的接地金属部件 ，其中所述接地金属部分连接到所述上基板上的所述第一接地线。

公开(公告)号：US20130257565A1

公开(公告)日：2013-10-03

申请号：US13741730

申请日：2013-01-15

Applicant: FUJITSU LIMITED

Inventor： Satoshi MASUDA

IPC: H01P1/00

CPC classification number: H01P3/02 ,  H01L23/047 ,  H01L23/15 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/66 ,  H01L25/0655 ,  H01L25/162 ,  H01L2223/6644 ,  H01L2223/6683 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2924/19107 ,  H05K1/021 ,  H05K1/0215 ,  H05K1/0243 ,  H05K1/141 ,  H05K3/4697 ,  H05K2201/1056 ,  H01L2924/00014

Abstract: A stacked module includes a first multilayer substrate including an opening having a stepwise wall face, and a first transmission line including a first grounding conductor layer, a second multilayer substrate supported on a stepped portion of the stepwise wall face and including a second transmission line including a second grounding conductor layer, a first chip mounted on a bottom of the opening and coupled to a third transmission line provided on the first multilayer substrate, and a second chip mounted on the front face of the second multilayer substrate and coupled to the second transmission line. A face to which the second grounding conductor layer or a fourth grounding conductor layer coupled thereto is exposed is joined to the stepped portion to which the first grounding conductor layer or a third grounding conductor layer coupled thereto is exposed, and the first and second grounding conductor layers are coupled.

Abstract translation: 堆叠模块包括：第一多层基板，包括具有逐步壁面的开口;以及第一传输线，包括第一接地导体层，第二多层基板，支撑在阶梯式壁面的阶梯部分上，并且包括第二传输线， 第二接地导体层，安装在所述开口的底部并且耦合到设置在所述第一多层基板上的第三传输线的第一芯片，以及安装在所述第二多层基板的前表面上并耦合到所述第二传输层的第二芯片 线。 第二接地导体层或耦合到其的第四接地导体层露出的面接合到第一接地导体层或与其耦合的第三接地导体层露出的台阶部分，第一和第二接地导体 层耦合。

公开(公告)号：US20140264788A1

公开(公告)日：2014-09-18

申请号：US14090560

申请日：2013-11-26

Applicant: FUJITSU LIMITED

Inventor： Satoshi MASUDA

IPC: H01L23/66

CPC classification number: H05K7/026 ,  H01L23/045 ,  H01L23/047 ,  H01L23/3677 ,  H01L23/49833 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/06181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2924/00014 ,  H01L2924/16195 ,  H01L2924/1627 ,  H01L2924/19107 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/0215 ,  H05K3/4697 ,  H05K7/20509 ,  H05K9/0039 ,  H05K2201/0919 ,  H05K2201/09845 ,  H05K2201/10242 ,  H05K2201/10371 ,  H05K2201/1056 ,  H01L2224/45099

Abstract: A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member, a semiconductor device mounted on an upper face of the upper substrate, a first ground line connected to the semiconductor device and formed on the upper substrate, and a ground metal part connected to the base metal part and disposed in the lower base member, wherein the ground metal part is connected to the first ground line on the upper substrate.

Abstract translation: 高频模块包括下基部件，其具有形成在其上表面中的凹部，并且具有形成在其下表面上的待接地的基底金属部分，设置在下部的凹部内的上基板 基底构件，安装在上基板的上表面上的半导体器件，连接到半导体器件并形成在上基板上的第一接地线，以及连接到基底金属部分并设置在下基底构件中的接地金属部件 ，其中所述接地金属部分连接到所述上基板上的所述第一接地线。