公开(公告)号：US20150031163A1

公开(公告)日：2015-01-29

申请号：US13950605

申请日：2013-07-25

Applicant: First Solar, Inc.

Inventor： Tammy Jane Lucas ,  Scott Daniel Feldman-Peabody ,  Laura Anne Clark ,  Michael Christoper Cole ,  Caroline Rae Corwine

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1828 ,  H01B1/22 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing.

Abstract translation: 提供了在薄膜光伏器件上形成背接触的方法，其包括将导电浆料涂覆在由pn结的p型吸收层（例如，包含碲化镉）所限定的表面上，并固化导电糊以形成 在由pn结的p型吸收层限定的表面上的导电涂层。 导电浆料可以包括导电材料，溶剂系统和粘合剂，使得在固化过程中，来自导电浆料的酸反应以使碲表面富集，同时铜沉积到富Te表面上。 然后酸在固化过程中基本消耗。

公开(公告)号：US20160181463A1

公开(公告)日：2016-06-23

申请号：US15057230

申请日：2016-03-01

Applicant: First Solar, Inc.

Inventor： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract translation: 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。

公开(公告)号：US09159864B2

公开(公告)日：2015-10-13

申请号：US13950605

申请日：2013-07-25

Applicant: First Solar, Inc.

Inventor： Tammy Jane Lucas ,  Scott Daniel Feldman-Peabody ,  Laura Anne Clark ,  Michael Christoper Cole ,  Caroline Rae Corwine

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1828 ,  H01B1/22 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/073 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: Methods for forming a back contact on a thin film photovoltaic device are provided that include applying a conductive paste onto a surface defined by a p-type absorber layer (e.g., comprising cadmium telluride) of a p-n junction and curing the conductive paste to form a conductive coating on the surface defined by a p-type absorber layer of the p-n junction. The conductive paste can include a conductive material, a solvent system, and a binder such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium while copper is deposited onto the Te enriched surface. The acid is then substantially consumed during curing.

Abstract translation: 提供了在薄膜光伏器件上形成背接触的方法，其包括将导电浆料涂覆在由pn结的p型吸收层（例如，包含碲化镉）所限定的表面上，并固化导电糊以形成 在由pn结的p型吸收层限定的表面上的导电涂层。 导电浆料可以包括导电材料，溶剂系统和粘合剂，使得在固化过程中，来自导电浆料的酸反应以使碲表面富集，同时铜沉积到富Te表面上。 然后酸在固化过程中基本消耗。