公开(公告)号：US20140338722A1

公开(公告)日：2014-11-20

申请号：US13893494

申请日：2013-05-14

Applicant: First Solar, Inc.

Inventor： Scott Daniel Feldman-Peabody ,  Robert Andrew Garber ,  Douglas Garth Jensen

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/042

CPC classification number: H02S30/00 ,  H01L31/02 ,  H01L31/03925 ,  H01L31/0488 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543

Abstract: Thin film photovoltaic devices are provided that include a transparent substrate defining an inner surface and an outer surface; a thin film stack on the inner surface of the transparent substrate; an encapsulation substrate on the thin film stack; and a color reflection film on the outer surface of the transparent substrate. The thin film stack has a photovoltaic heterojunction (e.g., formed from a n-type window thin film layer and an absorber thin film layer). Generally, the color reflection film comprises a colorant, such as a refractive material (e.g., a nitride material, an oxide material, or mixtures thereof). Methods are also provided for forming such a photovoltaic device, and for forming an array of photovoltaic devices to define an image.

Abstract translation: 提供薄膜光伏器件，其包括限定内表面和外表面的透明衬底; 在透明基板的内表面上的薄膜堆叠; 薄膜叠层上的封装衬底; 以及在透明基板的外表面上的彩色反射膜。 薄膜叠层具有光电异质结（例如，由n型窗薄膜层和吸收体薄膜层形成）。 通常，彩色反射膜包括着色剂，例如折射材料（例如，氮化物材料，氧化物材料或其混合物）。 还提供了用于形成这种光伏器件的方法，并且用于形成光电器件阵列以限定图像。

公开(公告)号：US20160181463A1

公开(公告)日：2016-06-23

申请号：US15057230

申请日：2016-03-01

Applicant: First Solar, Inc.

Inventor： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract translation: 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。