公开(公告)号：US20160181463A1

公开(公告)日：2016-06-23

申请号：US15057230

申请日：2016-03-01

Applicant: First Solar, Inc.

Inventor： Donald Franklin Foust ,  Hongbo Cao ,  Laura Anne Clark ,  Robert Andrew Garber ,  Scott Daniel Feldman-Peabody ,  Wyatt Keith Metzger ,  Yinghui Shan ,  Roman Shuba

IPC: H01L31/18

CPC classification number: H01L31/1828 ,  H01L21/02052 ,  H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  Y02E10/50 ,  Y02E10/543

Abstract: Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Abstract translation: 介绍了包括半导体材料在内的半导体层的处理方法。 一种方法包括使半导体材料的至少一部分与钝化剂接触。 该方法还包括通过将掺杂剂引入到半导体材料中来形成半导体层中的第一区域; 并形成富含硫族元素的区域。 该方法还包括在半导体层中形成第二区域，第二区域包括掺杂剂，其中第二区域中的掺杂剂的平均原子浓度大于第一区域中掺杂剂的平均原子浓度。 还介绍了光伏器件。