公开(公告)号：US20190074178A1

公开(公告)日：2019-03-07

申请号：US16120914

申请日：2018-09-04

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Riena JINNO ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Tokiyoshi MATSUDA ,  Takashi SHINOHE ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/778 ,  H01L29/737 ,  H01L29/24 ,  C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  C30B33/02

CPC classification number: H01L21/02565 ,  C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  C30B33/02 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/02483 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/0891 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7371 ,  H01L29/7786 ,  H01L29/7787

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

公开(公告)号：US20240363695A1

公开(公告)日：2024-10-31

申请号：US18771277

申请日：2024-07-12

Applicant: Flosfia Inc.

Inventor： Takashi SHINOHE ,  Mitsuru OKIGAWA ,  Koji AMAZUTSUMI ,  Yasushi HIGUCHI ,  Tokiyoshi MATSUDA

IPC: H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868 ,  H01L29/872

CPC classification number: H01L29/24 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/868 ,  H01L29/872

Abstract: Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.

公开(公告)号：US20190057866A1

公开(公告)日：2019-02-21

申请号：US16106931

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/20

Abstract: According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor including gallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1×1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.

公开(公告)号：US20190057865A1

公开(公告)日：2019-02-21

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L21/02565 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/04 ,  H01L29/24 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106cm−2.

公开(公告)号：US20190055646A1

公开(公告)日：2019-02-21

申请号：US16106554

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yuichi OSHIMA ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: C23C16/40 ,  C23C16/06 ,  C23C16/455 ,  C30B29/16 ,  C30B25/14

Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes gasifying a metal source to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.

公开(公告)号：US20210143251A1

公开(公告)日：2021-05-13

申请号：US16981550

申请日：2020-03-30

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi MATSUDA ,  Takahiro SASAKI ,  Toshimi HITORA ,  Isao TAKAHASHI

IPC: H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  C30B29/22

Abstract: As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

公开(公告)号：US20200279955A1

公开(公告)日：2020-09-03

申请号：US16764247

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Tokiyoshi MATSUDA ,  Takashi SHINOHE

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L27/12

Abstract: An industrially useful p-type oxide semiconductor with an enhanced semiconductor characteristic and a method of forming the p-type oxide semiconductor is provided. By using a metal oxide (for example, iridium oxide) gas as a raw material and conducting a crystal growth on a base with a corundum structure (for example, a sapphire substrate) until a film thickness to be equal to or more than 50 nm, a p-type oxide semiconductor film with a corundum structure includes a film thickness of equal to or more than 50 nm and a surface roughness of equal to or less than 10 nm is obtained.

公开(公告)号：US20190103465A1

公开(公告)日：2019-04-04

申请号：US16143757

申请日：2018-09-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi MATSUDA ,  Takashi SHINOHE ,  Shingo YAGYU ,  Takuto IGAWA

IPC: H01L29/267 ,  H01L29/04 ,  H01L21/02

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

公开(公告)号：US20190055667A1

公开(公告)日：2019-02-21

申请号：US16106864

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: C30B25/18 ,  H01L21/02 ,  H01L21/78 ,  C30B25/04 ,  C30B29/16

Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.

公开(公告)号：US20190006472A1

公开(公告)日：2019-01-03

申请号：US16020240

申请日：2018-06-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi MATSUDA ,  Takashi SHINOHE ,  Toshimi HITORA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/778 ,  H01L29/737 ,  H01L21/02

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an ε-phase crystalline oxide semiconductor with a first composition, and a second semiconductor layer including an ε-phase crystalline oxide semiconductor with a second composition that is different from the first composition of the first semiconductor layer, and the second semiconductor layer is layered on the first semiconductor layer.