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    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220393037A1

    公开(公告)日：2022-12-08

    申请号：US17834129

    申请日：2022-06-07

    Applicant: FLOSFIA INC.

    Inventor： Mitsuru OKIGAWA ,  Fujio OKUI ,  Yasushi HIGUCHI ,  Koji AMAZUTSUMI ,  Hidetaka SHIBATA ,  Yuji KATO ,  Atsushi TERAI

    IPC: H01L29/872 ,  H01L29/24

    Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220246733A1

    公开(公告)日：2022-08-04

    申请号：US17613393

    申请日：2020-05-22

    Applicant: FLOSFIA INC.

    Inventor： Mitsuru OKIGAWA ,  Yasushi HIGUCHI ,  Yusuke MATSUBARA

    IPC: H01L29/40 ,  H01L29/24 ,  H01L29/872

    Abstract: An object of the disclosure is to provide a semiconductor device with low-loss and suppressed leakage current, which is particularly useful for power devices. A semiconductor device including a semiconductor layer, a dielectric film provided on the semiconductor layer and having an opening and provided over a distance of at least 0.25 μm from the opening, and an electrode layer provided over a part or all of the dielectric film from the inside of the opening, wherein the dielectric film has a thickness of less than 50 nm from the opening to a distance of 0.25 μm, and has relative permittivity of 5 or less.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220223737A1

    公开(公告)日：2022-07-14

    申请号：US17613346

    申请日：2020-05-22

    Applicant: FLOSFIA INC.

    Inventor： Mitsuru OKIGAWA

    IPC: H01L29/786 ,  H01L29/47 ,  H01L29/872

    Abstract: An object of the disclosure is to provide a semiconductor device with low-loss and suppressed leakage current, which is particularly useful for power devices. A semiconductor device including a semiconductor layer including an oxide semiconductor having a corundum structure as a main component, and a Schottky electrode including a first electrode layer and a second electrode layer having a higher conductivity than the first electrode layer, wherein an outer edge portion of the second electrode layer is electrically connected to the semiconductor layer at an electrical connection region through the first electrode layer, and an outer edge portion of the first electrode layer is located outside an outer edge portion of the electrical connection region.

    SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM
    7.
    发明申请
    SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM 有权

    公开(公告)号：US20210242363A1

    公开(公告)日：2021-08-05

    申请号：US17163826

    申请日：2021-02-01

    Applicant: FLOSFIA INC.

    Inventor： Mitsuru OKIGAWA ,  Manabu KIGUCHI ,  Koji AMAZUTSUMI

    IPC: H01L31/173 ,  H01L31/032 ,  H01L31/113

    Abstract: A semiconductor element and/or semiconductor device having enhanced semiconductor characteristics useful as power devices are provided. A semiconductor element, including: a first electrode; a second electrode; an n−-type semiconductor layer; and a low electrically conductive layer, the low electrically conductive layer that is arranged between the first electrode and the n−-type semiconductor layer, a first barrier height of the first electrode is larger than a second barrier height of the second electrode, a first electrical resistivity of the low electrically conductive layer is equal to or more than 1000 times as large as a second electrical resistivity of the n−-type semiconductor layer, and the semiconductor element that is configured to be able to irradiate light from an outside to at least a part of the low electrically conductive layer.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220393015A1

    公开(公告)日：2022-12-08

    申请号：US17834089

    申请日：2022-06-07

    Applicant: FLOSFIA INC.

    Inventor： Mitsuru OKIGAWA ,  Fujio OKUI ,  Yasushi HIGUCHI ,  Koji AMAZUTSUMI ,  Hidetaka SHIBATA ,  Yuji KATO ,  Atsushi TERAI

    IPC: H01L29/47 ,  H01L29/06

    Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

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