公开(公告)号：US20250022791A1

公开(公告)日：2025-01-16

申请号：US18901920

申请日：2024-09-30

Applicant: Flosfia Inc.

Inventor： Hiroshi KONDO ,  Tatsuhiro NAKAZAWA ,  Kengo TAKEUCHI ,  Takashi SHINOHE

IPC: H01L23/498

Abstract: Provided is a semiconductor device including: a first wiring layer; a holding layer; a semiconductor element that is disposed between the first wiring layer and the holding layer and includes at least a semiconductor layer and a first electrode disposed on a first surface of the semiconductor layer; an insulator in which at least a part of the semiconductor element is embedded; and a first connecting portion that electrically connects the first wiring layer and the first electrode, wherein a connection area between the first connecting portion and the first electrode occupies 45% or more of an area of an exposed part of the first electrode.

公开(公告)号：US20240363695A1

公开(公告)日：2024-10-31

申请号：US18771277

申请日：2024-07-12

Applicant: Flosfia Inc.

Inventor： Takashi SHINOHE ,  Mitsuru OKIGAWA ,  Koji AMAZUTSUMI ,  Yasushi HIGUCHI ,  Tokiyoshi MATSUDA

IPC: H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868 ,  H01L29/872

CPC classification number: H01L29/24 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/868 ,  H01L29/872

Abstract: Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.

公开(公告)号：US20230253462A1

公开(公告)日：2023-08-10

申请号：US18107684

申请日：2023-02-09

Applicant: FLOSFIA INC. ,  MIRISE Technologies Corporation ,  DENSO CORPORATION

Inventor： Takashi SHINOHE ,  Hiroyuki ANDO ,  Yasushi HIGUCHI ,  Shinpei MATSUDA ,  Kazuya TANIGUCHI ,  Hiroki WATANABE ,  Hideo MATSUKI

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/04 ,  H01L29/78 ,  C01G55/00 ,  C30B29/68 ,  C30B29/24

CPC classification number: H01L29/24 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02483 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/045 ,  H01L21/02609 ,  H01L29/7813 ,  C01G55/002 ,  C30B29/68 ,  C30B29/24 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2006/32 ,  C01P2002/72

Abstract: Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

公开(公告)号：US20190165383A1

公开(公告)日：2019-05-30

申请号：US16197592

申请日：2018-11-21

Applicant: FLOSFIA INC. ,  EYETEC CO., LTD. ,  KYOTO UNIVERSITY

Inventor： Shizuo FUJITA ,  Masafumi ONO ,  Takayuki UCHIDA ,  Kentaro KANEKO ,  Takashi TANAKA ,  Shingo YAGYU ,  Takashi SHINOHE ,  Takuto IGAWA

IPC: H01M8/0228 ,  H01M8/026 ,  H01M8/021 ,  H01M8/0215 ,  C23C16/40 ,  C23C16/448

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a base including a first metal as a major component and a second metal that is different from the first metal, and a thermal oxide film of the base arranged on the base and containing an oxide of the first metal and an oxide of the second metal. The first metal contained in the base is more in atomic composition ratio than the second metal contained in the base. The first metal of the oxide contained in the thermal oxide film is less in atomic composition ratio than the first metal contained in the base. The second metal of the oxide contained in the thermal oxide film is equal to or more in atomic ratio than the first metal of the oxide contained in the thermal oxide film.

公开(公告)号：US20190057866A1

公开(公告)日：2019-02-21

申请号：US16106931

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi OSHIMA ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Makoto KASU ,  Katsuaki KAWARA ,  Takashi SHINOHE ,  Tokiyoshi MATSUDA ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/24 ,  C30B25/04 ,  C30B25/18 ,  C30B29/20

Abstract: According to an aspect of a present inventive subject matter, a crystal includes: a corundum-structured oxide semiconductor as a major component, the corundum-structured oxide semiconductor including gallium and/or indium and doped with a dopant including germanium; a principal plane; a carrier concentration that is 1×1018/cm3 or more; and an electron mobility that is 20 cm2/Vs or more.

公开(公告)号：US20230335581A1

公开(公告)日：2023-10-19

申请号：US18207912

申请日：2023-06-09

Applicant: FLOSFIA INC.

Inventor： Yasushi HIGUCHI ,  Takashi SHINOHE

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/739 ,  H01L29/872 ,  H01L29/24

CPC classification number: H01L29/06 ,  H01L29/7869 ,  H01L29/7393 ,  H01L29/872 ,  H01L29/24

Abstract: Provided a semiconductor device having a structure to suppress hole injections into the gate insulator. A semiconductor device including a gate insulating film, a hole blocking layer placed in contact with the gate insulating film, and an oxide semiconductor layer placed in contact with the hole blocking layer, wherein the hole blocking layer is located between the gate insulating film and the oxide semiconductor layer.

公开(公告)号：US20220158000A1

公开(公告)日：2022-05-19

申请号：US17575857

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Yasushi HIGUCHI ,  Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Takashi SHINOHE

IPC: H01L29/872 ,  H01L29/24 ,  H01L29/04 ,  H01L29/47 ,  H01L29/417

Abstract: Provided is a semiconductor device in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented, the semiconductor device that is particularly useful for power devices. A semiconductor device including at least: a semiconductor layer; a Schottky electrode; and an insulator layer provided between a part of the semiconductor layer and the Schottky electrode, wherein the semiconductor layer contains a crystalline oxide semiconductor, and wherein the insulator layer has a taper angle of 10° or less.

公开(公告)号：US20200211919A1

公开(公告)日：2020-07-02

申请号：US16724516

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao TAKAHASHI ,  Tatsuya TORIYAMA ,  Masahiro SUGIMOTO ,  Takashi SHINOHE ,  Hideyuki UEHIGASH ,  Junji OHARA ,  Fusao HIROSE ,  Hideo MATSUKI

IPC: H01L23/373

Abstract: A crystalline oxide film with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide film including a first crystal axis, a second crystal axis; a metal oxide as a major component that includes gallium, a first side; and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US20190203352A1

公开(公告)日：2019-07-04

申请号：US16235084

申请日：2018-12-28

Applicant: FLOSFIA INC.

Inventor： Shigetaka KATORI ,  Takashi SHINOHE ,  Takuto IGAWA

IPC: C23C16/448 ,  C09D147/00 ,  C23C16/46 ,  C03C17/32

CPC classification number: C23C16/4486 ,  C03C17/32 ,  C03C2218/1525 ,  C09D147/00 ,  C23C16/46

Abstract: In a first aspect of a present inventive subject matter, a method of forming an organic film includes preparing a raw material solution containing an organic compound and a solvent with a boiling point that is 150° C. or higher; generating atomized droplets by atomizing the raw material solution containing the organic compound and the solvent with the boiling point that is 150° C. or higher; carrying the atomized droplets onto a base; and causing thermal reaction of the atomized droplets adjacent to the base at a temperature that is the boiling point of the solvent or at a higher temperature than the boiling point of the solvent contained in the raw material solution to form an organic film on the base.

公开(公告)号：US20190074178A1

公开(公告)日：2019-03-07

申请号：US16120914

申请日：2018-09-04

Applicant: FLOSFIA INC. ,  KYOTO UNIVERSITY

Inventor： Riena JINNO ,  Shizuo FUJITA ,  Kentaro KANEKO ,  Tokiyoshi MATSUDA ,  Takashi SHINOHE ,  Toshimi HITORA

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/778 ,  H01L29/737 ,  H01L29/24 ,  C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  C30B33/02

CPC classification number: H01L21/02565 ,  C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  C30B33/02 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/02483 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/0891 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7371 ,  H01L29/7786 ,  H01L29/7787

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.