Abstract:
A corona-microwave system can generate accurate capacitance-voltage (C-V) and resistance-voltage (R-V) curves, thereby allowing the accurate determination of gate film capacitance, sheet resistance of implanted regions, and mobility of a substrate under a gate. The corona-microwave system can combine a corona deposition system, a Kelvin probe, and a microwave probe. The corona deposition system can deposit a corona charge on a surface of the semiconductor. The Kelvin and microwave probes can be used to make first and second electrical measurements of a layer/region of the semiconductor. The steps of charge deposition and probe measurements can be repeated to generate a curve plotting the first and second electrical measurements. Because the first and second electrical measurements can be accurately made, the extracted information from the curve is also accurate.
Abstract:
A system for characterizing material properties in miniature semiconductor structures performs a scatterometry analysis on inelastically scattered light. The system can include a narrowband probe beam generator and a detector. A single wavelength probe beam from the narrowband probe beam generator produces scattered light from a measurement pattern on a test sample. The scattered light is measured by the detector, and the measurement data (e.g., Raman spectrum) is used in a scatterometry analysis to determine material properties for the measurement pattern. The detector can measure either incoherent inelastically scattered light (e.g., using a spectrometer) or coherent inelastically scattered light (e.g., using an array detector). If the measurement pattern dimensions are substantially similar to actual device dimensions, the material property distributions determined for the measurement pattern can be applied to the actual devices on the test sample.
Abstract:
An x-ray metrology system includes an e-beam generator to cause a test sample to emit x-rays, x-ray optics for focusing the x-rays, and an x-ray imager to generate an image of the test sample from the focused x-rays. Because the x-ray imager provides a direct representation of the x-ray emission characteristics of the test sample, the resolution of a measurement taken using such a sensor is limited only by the resolution of the sensor (and any focusing optics), rather than by the amount of e-beam spread in the thin film. The x-ray imaging can be performed for object planes at the test sample that are not parallel to the test sample, thereby allowing vertical dimension data to be accurately generated by the x-ray imaging system.
Abstract:
The flow cell system and method of the present invention for constructing and operating a light scattering test stand enables close reproducible tolerances to be achieved and automatically ensures the mutual alignment of the structures utilized to maintain stability. Pins and bosses are utilized to maintain alignment of the cell assembly with the read head. The flow cell assembly is held down in the read head independently of the stray light cover. The design of the present invention enables precision alignment reproducibility and ease of use.
Abstract:
A spectroscopic ellipsometry system directs a near infra-red (NIR) probe beam at a test sample to allow metrology to be performed on vertical structures within the test sample. Because silicon is relatively transparent to NIR light, structural information can be determined from the polarization effects produced by the test sample, in a manner similar to that used with IR spectroscopic ellipsometry systems. However, unlike IR light, which requires delicate and costly optical and measurement components (e.g., vibration-sensitive Fourier transform sensors), NIR light can be directed and detected using more robust and inexpensive components (e.g., array-based detectors), thereby making a NIR spectroscopic ellipsometry system much more affordable and usable than conventional IR spectroscopic ellipsometry systems.
Abstract:
A system for analyzing a thin film uses an energy beam, such as a laser beam, to remove a portion of a contaminant layer formed on the thin film surface. This cleaning operation removes only enough of the contaminant layer to allow analysis of the underlying thin film, thereby enhancing analysis throughput while minimizing the chances of recontamination and/or damage to the thin film. An energy beam source can be readily incorporated into a conventional thin film analysis tool, thereby minimizing total analysis system footprint. Throughput can be maximized by focusing the probe beam (or probe structure) for the analysis operation at the same location as the energy beam so that repositioning is not required after the cleaning operation. Alternatively, the probe beam (structure) and the energy beam can be directed at different locations to reduce the chances of contamination of the analysis optics.
Abstract:
A system for analyzing a thin film simultaneously applies a pulsed cleaning beam and a measurement beam to an analysis location on a test sample to enhance measurement accuracy. The pulsed cleaning beam prevents contaminant regrowth on the analysis location during the actual measurement. To minimize the effects of thermal transients from the pulsed cleaning beam on measurement data, cleaning pulses can be timed to fall between data samples. Alternatively, data sampling can be blocked during each cleaning operation (i.e., each cleaning pulse and subsequent cooldown period) or data levels can be clamped at measurement levels from just before the start of the cleaning operation for the duration of the cleaning operation. Alternatively, data samples taken during each cleaning operation can be discarded or replaced with data samples from just before the cleaning operation using post-processing techniques.
Abstract:
A method for measuring three-dimensional gate dielectric structures can involve forming test patterns that cover a range of dimensional values for the fins on which the gate dielectric structures are formed. Then, by measuring the gate dielectric properties and then correlating those measurements with the underlying fin dimensions, a relationship between fin dimension(s) and gate dielectric properties can be determined. That relationship can then be applied to actual device structures to interpolate/extrapolate gate dielectric property values based on the fin dimensions in the actual device.
Abstract:
An x-ray metrology system includes one or more transmissive x-ray optical elements, such as zone plates or compound refractive x-ray lenses, to shape the x-ray beams used in the measurement operations. Each transmissive x-ray optical element can focus or collimate a source x-ray beam onto a test sample. Another transmissive x-ray optical element can be used to focus reflected or scattered x-rays onto a detector to enhance the resolving capabilities of the system. The compact geometry of transmissive x-ray optical element allows for more flexible placement and positioning than would be feasible with conventional curved crystal reflectors. For example, multiple x-ray beams can be focused onto a test sample using a transmissive x-ray optical element array. Robust zone plates can be efficiently produced using a damascene process.
Abstract:
A spectrometer for detecting and quantifying elements in a sample. An exciter ionizes atoms in the sample, and the atoms thereby produce characteristic x-rays. A detector receives the x-rays and produces signals based on the x-rays. A filter system selectively blocks the x-rays from attaining the detector. The selective blocking of the x-rays is accomplished based on an energy of the x-rays. An analyzer receives the signals from the detector and detects and quantifies the elements in the sample based at least in part on the signals. In this manner, detector receives the light element x-rays, and the medium and heavy element x-rays are filtered out to avoid overwhelming the detector. This invention combines the large solid angle, high efficiency, and ability to measure the continuous background spectrum of the energy dispersive x-ray detector with the selectivity of the wavelength dispersive x-ray detector. It thus enables faster and more accurate measurement of light elements in thin films. This invention enhances the light element performance of a system by enabling higher throughput, lower e-beam and x-ray dose to the sample, and improved accuracy from the capability to measure the background radiation.