公开(公告)号：US20160049555A1

公开(公告)日：2016-02-18

申请号：US14918580

申请日：2015-10-21

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。

公开(公告)号：US20160043281A1

公开(公告)日：2016-02-11

申请号：US14919693

申请日：2015-10-21

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/40 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。

公开(公告)号：US20170084791A1

公开(公告)日：2017-03-23

申请号：US15365918

申请日：2016-11-30

Applicant: Genesis Photonics Inc.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

公开(公告)号：US09196797B2

公开(公告)日：2015-11-24

申请号：US13661272

申请日：2012-10-26

Applicant: GENESIS PHOTONICS INC.

Inventor： Yu-Yun Lo ,  Yi-Ru Huang ,  Chih-Ling Wu ,  Tzu-Yang Lin ,  Yun-Li Li

IPC: H01L33/44 ,  H01L33/40 ,  H01L33/46 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/14 ,  H01L2933/0016

Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.

Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。