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公开(公告)号：US08388924B2
公开(公告)日：2013-03-05
申请号：US13091701
申请日：2011-04-21
Applicant: Gouri Radhakrishnan , Paul Michael Adams
Inventor： Gouri Radhakrishnan , Paul Michael Adams
IPC: C01B31/04
CPC classification number: C30B25/14 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/02 , C01B2204/32 , C30B29/02
Abstract: The present application relates generally to methods for growth of high quality graphene films. In particular, a method is provided for forming a graphene film using a modified chemical vapor deposition process using an oxygen-containing hydrocarbon liquid precursor. Desirably, the graphene films are a single-layer and have a single grain continuity of at least 1 μm2.
Abstract translation: 本申请一般涉及用于生长高质量石墨烯膜的方法。 特别地，提供了一种使用使用含氧烃液体前体的改进的化学气相沉积法形成石墨烯膜的方法。 理想地，石墨烯膜是单层的并且具有至少1μm2的单个晶粒连续性。
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2.发明授权Ultra-stable refractory high-power thin film resistors for space applications 有权用于空间应用的超稳定耐火大功率薄膜电阻器公开(公告)号：US08284012B2
公开(公告)日：2012-10-09
申请号：US12478376
申请日：2009-06-04
Applicant: Robert C. Cole , Gouri Radhakrishnan
Inventor： Robert C. Cole , Gouri Radhakrishnan
IPC: H01C7/10
CPC classification number: H01C7/006 , H01C17/0652 , Y10T29/49099
Abstract: A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor.
Abstract translation: 一种制造薄膜电阻器的方法，包括提供衬底，使用低温脉冲激光沉积工艺在衬底上沉积碳化钛（TiC）层，用蚀刻工艺去除TiC层的一部分以留下TiC 在TiC图案的相对端上沉积导电材料以提供薄膜电阻器。
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3.发明授权Method for producing large-diameter 3D carbon nano-onion structures at room temperature 有权在室温下生产大直径3D碳纳米结构的方法公开(公告)号：US07790243B2
公开(公告)日：2010-09-07
申请号：US11458579
申请日：2006-07-19
Applicant: Gouri Radhakrishnan , Paul M. Adams , Franklin D. Ross
Inventor： Gouri Radhakrishnan , Paul M. Adams , Franklin D. Ross
CPC classification number: H01M4/587 , B82Y30/00 , B82Y40/00 , C01B32/18 , C23C14/0605 , C23C14/28 , H01M4/133 , H01M4/1393 , H01M4/66 , H01M6/40 , Y10S977/844 , Y10S977/901 , Y10T428/25
Abstract: A method includes imparting energy to a target in an oxygen-containing atmosphere at room temperature to provide a substrate facing the target with a carbonaceous coating that includes nested carbon structures.
Abstract translation: 一种方法包括在室温下在含氧气氛中向目标物施加能量，以提供面向靶材的基材与包含嵌套碳结构的碳质涂层。
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4.发明申请Method for producing carbon surface films by plasma exposure of a carbide compound 有权通过碳化物化合物的等离子体暴露来生产碳表面膜的方法公开(公告)号：US20060068125A1
公开(公告)日：2006-03-30
申请号：US10954455
申请日：2004-09-30
Applicant: Gouri Radhakrishnan
Inventor： Gouri Radhakrishnan
IPC: H05H1/24
CPC classification number: C04B35/5607 , B81B3/0075 , B81C1/0038 , B81C2201/0181 , C04B35/5611 , C04B35/5622 , C04B35/5626 , C04B35/565 , C04B2235/96 , C04B2235/9692
Abstract: Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.
Abstract translation: 使用例如使用射频等离子体从低压卤素气体产生的氯化物离子的活性卤离子等离子体用于在室温或室温附近产生低摩擦碳涂层，例如纯碳膜， 化合物的本体或薄膜，例如碳化钛。
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公开(公告)号：US5650361A
公开(公告)日：1997-07-22
申请号：US560759
申请日：1995-11-21
Applicant: Gouri Radhakrishnan
Inventor： Gouri Radhakrishnan
IPC: C23C16/30 , C23C16/48 , H01L21/318 , H01L21/02
CPC classification number: H01L21/318 , C23C16/303 , C23C16/483 , Y10S148/113 , Y10S148/158
Abstract: Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films that are amorphous, smooth and featureless having a band gap of 5.8 eV, a refractive index of 2.0, a breakdown electric field breakdown of 10.sup.8 V/m, a low-frequency dielectric constant of 6.0-6.9, high-frequency dielectric constant of 3.9-4.0, well suited for many thin film applications.
Abstract translation: 使用三相胺丙烷和氨前体的气相193nm准分子激光光解法，在350℃下，在硅，GaAs，熔融石英和KBr衬底上沉积氮化铝薄膜，而不引起它们之间的热诱导或自发反应，导致AlN 具有5.8eV的带隙，折射率为2.0，击穿电场击穿为108V / m，低频介电常数为6.0-6.9，高频介电常数的非晶，平滑且无特征的薄膜 为3.9-4.0，非常适合许多薄膜应用。
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Patent Agency Ranking
6.发明申请Ultra-Stable Refractory High-Power Thin Film Resistors for Space Applications 有权用于空间应用的超稳定耐火大功率薄膜电阻器公开(公告)号：US20100308955A1
公开(公告)日：2010-12-09
申请号：US12478376
申请日：2009-06-04
Applicant: Robert C. Cole , Gouri Radhakrishnan
Inventor： Robert C. Cole , Gouri Radhakrishnan
CPC classification number: H01C7/006 , H01C17/0652 , Y10T29/49099
Abstract: A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor.
Abstract translation: 一种制造薄膜电阻器的方法，包括提供衬底，使用低温脉冲激光沉积工艺在衬底上沉积碳化钛（TiC）层，用蚀刻工艺去除TiC层的一部分以留下TiC 在TiC图案的相对端上沉积导电材料以提供薄膜电阻器。
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7.发明授权Method for producing carbon surface films by plasma exposure of a carbide compound 有权通过碳化物化合物的等离子体暴露来生产碳表面膜的方法公开(公告)号：US07241475B2
公开(公告)日：2007-07-10
申请号：US10954455
申请日：2004-09-30
Applicant: Gouri Radhakrishnan
Inventor： Gouri Radhakrishnan
CPC classification number: C04B35/5607 , B81B3/0075 , B81C1/0038 , B81C2201/0181 , C04B35/5611 , C04B35/5622 , C04B35/5626 , C04B35/565 , C04B2235/96 , C04B2235/9692
Abstract: Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.
Abstract translation: 使用例如使用射频等离子体从低压卤素气体产生的氯化物离子的活性卤离子等离子体用于在室温或室温附近产生低摩擦碳涂层，例如纯碳膜， 化合物的本体或薄膜，例如碳化钛。
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8.发明授权
公开(公告)号：US5332879A
公开(公告)日：1994-07-26
申请号：US984605
申请日：1992-12-02
Applicant: Gouri Radhakrishnan , Heinrich G. Muller
Inventor： Gouri Radhakrishnan , Heinrich G. Muller
CPC classification number: H01L21/4864 , B08B7/0042 , B23K26/362 , B23K26/402 , B23K2203/30 , B23K2203/42
Abstract: A technique is described for the removal of trace metal contaminants from organic dielectrics such as polyimide. Pulsed ultraviolet radiation is used to remove the contaminants from the dielectric, regardless of their chemical nature, by the process of ablation. The process allows prepatterned bulk metal features to be simultaneously exposed to the pulsed radiation and yet remain unaffected.
Abstract translation: 描述了从有机电介质如聚酰亚胺中去除痕量金属污染物的技术。 脉冲紫外线辐射用于通过消融过程从电介质中去除污染物，而不管其化学性质如何。 该方法允许预制图案的体金属特征同时暴露于脉冲辐射，但仍保持不受影响。
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公开(公告)号：US20100288530A1
公开(公告)日：2010-11-18
申请号：US12841796
申请日：2010-07-22
Applicant: Gouri Radhakrishnan , Paul M. Adams , Franklin D. Ross
Inventor： Gouri Radhakrishnan , Paul M. Adams , Franklin D. Ross
IPC: H01B5/00
CPC classification number: H01M4/587 , B82Y30/00 , B82Y40/00 , C01B32/18 , C23C14/0605 , C23C14/28 , H01M4/133 , H01M4/1393 , H01M4/66 , H01M6/40 , Y10S977/844 , Y10S977/901 , Y10T428/25
Abstract: A method includes imparting energy to a target in an oxygen-containing atmosphere at room temperature to provide a substrate facing the target with a carbonaceous coating that includes nested carbon structures.
Abstract translation: 一种方法包括在室温下在含氧气氛中向目标物施加能量，以提供面向靶材的基材与包含嵌套碳结构的碳质涂层。
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公开(公告)号：US5858478A
公开(公告)日：1999-01-12
申请号：US982666
申请日：1997-12-02
Applicant: Gouri Radhakrishnan
Inventor： Gouri Radhakrishnan
CPC classification number: C23C14/28
Abstract: The present invention relies upon a free space magnetic field in a pulsed laser deposition (PLD) chamber for forming high quality thin films made from diverted ions from a plume evaporated from an ablated target illuminated by a pulsed laser beam. The magnetic field exerts a qv.times.B Lorentz force upon the ions that is orthogonal to the magnetic field and to their direction of travel in the plume, and curves the ions toward the substrate, while neutral particulates continue to pass by the substrate so that the large neutral particulates are not deposited on the substrate. A shield prevents the deposition of plume species in direct line of sight between the target and the substrate so that only charged ions curved by the magnet are deposited on the substrate. A permanent magnet is used to separate charged species from neutral species. The magnetic field deflects the charged species away from the primary direction of travel of the plume and toward the substrate for deposition of the charged ion species on the substrate. The method provides particulate-free films having improved crystallinity, uniformity and adhesion.
Abstract translation: 本发明依赖于脉冲激光沉积（PLD）室中的自由空间磁场，用于形成由从由脉冲激光束照射的消融靶所蒸发的羽流的转向离子制成的高质量薄膜。 磁场对垂直于磁场的离子及其在羽流中的行进方向施加qvxB洛伦兹力，并将离子弯曲向衬底，而中性粒子继续通过衬底，使得大的中性 颗粒不沉积在基底上。 屏蔽物防止羽流物质在目标和基底之间的直接视线中沉积，使得仅由磁体弯曲的带电离子沉积在基底上。 永久磁铁用于将带电物质与中性物质分离。 磁场使带电物质偏离羽流的主要行进方向并朝向基底，以将带电离子物质沉积在基底上。 该方法提供了具有改善的结晶度，均匀性和粘附性的无颗粒膜。
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