公开(公告)号：US20030192168A1

公开(公告)日：2003-10-16

申请号：US10437090

申请日：2003-05-13

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Min Li ,  Simon H. Liao ,  Masashi Sano ,  Kiyoshi Noguchi ,  Kochan Ju ,  Cheng T. Horng

IPC: G11B005/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.

Abstract translation: 一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。 根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

公开(公告)号：US20030133232A1

公开(公告)日：2003-07-17

申请号：US10050644

申请日：2002-01-16

Applicant: Headway Technologies, Inc.

Inventor： Min Li ,  Simon H. Liao ,  Masashi Sano ,  Kiyoshi Noguchi ,  Kochan Ju ,  Cheng T. Horng

IPC: G11B005/39 ,  C21D001/04

CPC classification number: C22C38/10 ,  B32B15/01 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C22C38/12 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.

Abstract translation: 一种用于形成具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件的方法和包括单个镜面反射纳米氧化物层（NOL）或包含非金属的双层的双层的覆盖层 层和镜面反射纳米氧化物层和如此形成的传感器元件。 制造这些传感器元件的方法提供了具有比现有技术的元件更高的GMR比和较低电阻的元件。