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    High density recording, dual stripe MR (DSMR) head and method for achieving anti-parallel exchange coupling with one biased layer having low coercivity
    2.
    发明申请
    High density recording, dual stripe MR (DSMR) head and method for achieving anti-parallel exchange coupling with one biased layer having low coercivity 失效
    高密度记录双重MR（DSMR）头和用于实现与具有低矫顽力的一个偏置层的反平行交换耦合的方法

    公开(公告)号：US20020067578A1

    公开(公告)日：2002-06-06

    申请号：US09946986

    申请日：2001-09-06

    Applicant: HEADWAY TECHNOLOGIES, INC.

    Inventor： Simon H. Liao ,  Min Li

    IPC: G11B005/127 ,  G11B005/33 ,  B05D005/12

    CPC classification number: G11B5/3954 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

    Abstract: A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.

    Abstract translation: 一种形成DSMR头的方法包括以下步骤：在第一铁磁条的一部分上形成具有第一反FM（AFM）钉扎层的衬底上的第一铁磁（FM）条带，第一AFM钉扎层由 第一种材料。 然后进行第一高温退火步骤。 在条带和钉扎层上形成非磁性层。 然后在非磁性层上形成第二FM带，并在第二FM带的一部分上形成第二AFM钉扎层，第二AFM钉扎层由第一材料组成。 在存在与第一磁场反平行的第二磁场的情况下，在第一和第二FM带以及第一和第二钉扎层和中间非磁性层上执行第二高温退火步骤。 提供具有NiFe FM带和FeMn或MnPt等的头，用于两个条的AFM层。

    Method for fabricating a non-parallel magnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor element
    4.
    发明申请
    Method for fabricating a non-parallel magnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor element 失效

    公开(公告)号：US20030039078A1

    公开(公告)日：2003-02-27

    申请号：US09920602

    申请日：2001-08-02

    Applicant: HEADWAY TECHNOLOGIES, INC.

    Inventor： Min Li ,  Simon H. Liao

    IPC: G11B005/10 ,  G11B005/11 ,  G11B005/127

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C10M103/02 ,  C10M103/04 ,  C10M103/06 ,  C10M111/00 ,  C10M125/00 ,  C10M125/22 ,  C10M2201/0413 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3954 ,  G11B5/3967 ,  G11B5/465 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3268 ,  H01F41/304 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49036 ,  Y10T29/49043

    Abstract: Within a method for forming a magnetoresistive (MR) sensor element there is first provided a substrate. There is then formed over the substrate a first magnetoresistive (MR) layer having formed contacting the first magnetoresistive (MR) layer a magnetically biased first magnetic bias layer biased in a first magnetic bias direction with a first magnetic bias field strength. There is also formed separated from the first magnetoresistive (MR) layer by a spacer layer a second magnetoresistive (MR) layer having formed contacting the second magnetoresistive (MR) layer a magnetically un-biased second magnetic bias layer. There is then biased through use of a first thermal annealing method employing a first thermal annealing temperature, a first thermal annealing exposure time and a first extrinsic magnetic bias field the magnetically un-biased second magnetic bias layer to form a magnetically biased second magnetic bias layer having a second magnetic bias field strength in a second magnetic bias direction non-parallel to the first magnetic bias direction while simultaneously partially demagnetizing the magnetically biased first magnetic bias layer to provide a partially demagnetized magnetically biased first magnetic bias layer having a partially demagnetized first magnetic bias field strength less than the first magnetic bias field strength. Finally, there is then annealed thermally through use of a second thermal annealing employing a second thermal annealing temperature and a second thermal annealing exposure time without a second magnetic bias field: (1) the partially demagnetized magnetically biased first magnetic bias layer layer to form a remagnetized partially demagnetized first magnetic bias layer having a remagnetized partially demagnetized first netic bias field strength greater than the partially demagnetized first magnetic bias field strength; and (2) the magnetically biased second magnetic bias layer to form a further magnetically biased second magnetic bias layer having a further magnetized second magnetic bias field strength greater than the second magnetic bias field strength.

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