公开(公告)号：US20210358760A1

公开(公告)日：2021-11-18

申请号：US16495515

申请日：2019-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Sumiko FUJISAKI ,  Yoshihide YAMAGUCHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

公开(公告)号：US20200006079A1

公开(公告)日：2020-01-02

申请号：US16286262

申请日：2019-02-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Kazumasa OOKUMA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

公开(公告)号：US20150031213A1

公开(公告)日：2015-01-29

申请号：US14514587

申请日：2014-10-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Go MIYA ,  Masaru IZAWA ,  Takumi TANDOU

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32724 ,  H01J37/32825 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67109

Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract translation: 提供了一种等离子体处理装置，其包括多个上游侧膨胀阀和连接到各个制冷剂入口的各个下游侧膨胀阀和各个制冷剂出口，以调节制冷剂的流量或压力 流入相应的制冷剂入口以及从各个制冷剂出口流出的制冷剂的流量或压力。 该方法包括调节上游侧膨胀阀的开口和下游侧膨胀阀的开口，使得在多个上游侧膨胀阀和多个上游侧膨胀阀之间的多个制冷剂通道中不会发生制冷剂的流量变化 的下游侧膨胀阀通过允许制冷剂在其中流动的制冷循环中的多个制冷剂通道。

公开(公告)号：US20210242030A1

公开(公告)日：2021-08-05

申请号：US16646057

申请日：2019-04-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori SHINODA ,  Hiroto OTAKE ,  Hiroyuki KOBAYASHI ,  Kohei KAWAMURA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  H01J37/18

Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve.
A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

公开(公告)号：US20190237302A1

公开(公告)日：2019-08-01

申请号：US16378783

申请日：2019-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20190067032A1

公开(公告)日：2019-02-28

申请号：US15906862

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazunori SHINODA ,  Naoyuki KOFUJI ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kohei KAWAMURA ,  Masaru IZAWA ,  Kenji ISHIKAWA ,  Masaru HORI

IPC: H01L21/3213 ,  H01L27/115 ,  H01L21/67

CPC classification number: H01L21/32138 ,  H01J37/00 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/115 ,  H01L27/11556

Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

公开(公告)号：US20170229290A1

公开(公告)日：2017-08-10

申请号：US15072392

申请日：2016-03-17

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20210231571A1

公开(公告)日：2021-07-29

申请号：US16646487

申请日：2019-02-15

Applicant: Hitachi High-Technologies Corporation

Inventor： Yoshifumi OGAWA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: G01N21/73 ,  H01J37/32 ,  H05H1/24 ,  H01L21/67 ,  C23C16/52

Abstract: Provided is a detecting device of gas components that includes a gas component detecting unit for detection of a light emission of plasma that is formed by re-excitation downstream of an arrangement position of an object to be processed. The gas component detecting unit includes an introduced gas supply portion that supplies an introduced gas, a nozzle portion that is provided with a hole through which the introduced gas that is supplied from the introduced gas supply portion passes through and an opening through which a part of a gas to be analyzed flowing through an exhaust pipe portion is introduced into an inside of the hole, the opening being provided in an intermediate portion of the hole, a discharge electrode portion that generates plasma inside the nozzle portion by causing the gas to be analyzed that is introduced from the opening into an inside of the nozzle portion and the introduced gas that is supplied into the inside of the hole to discharge, and a light emission detecting unit that detects a light emission of the plasma generated inside the nozzle portion by the discharge electrode portion.

公开(公告)号：US20190237337A1

公开(公告)日：2019-08-01

申请号：US16328228

申请日：2018-01-31

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Miyako MATSUI ,  Tatehito USUI ,  Masaru IZAWA ,  Kenichi KUWAHARA

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/308 ,  H01L21/67 ,  H01J37/32 ,  G01B11/06

CPC classification number: H01L21/30655 ,  G01B11/0625 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32963 ,  H01J2237/24578 ,  H01J2237/332 ,  H01J2237/3347 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S1) of introducing a reactive gas having a deposit property to a processing chamber and forming a deposit layer over the surface of a pattern to be etched of a substrate to be etched, the etching process (S2) of removing a reaction product of the deposit layer and the surface of the pattern to be etched, and a monitoring process (S3) of irradiating light to the pattern to be etched at the time of the depo process of cycle etching for executing two processes alternately and working a fine pattern and monitoring a change amount of the film thickness of the deposit layer by change of a coherent light having a specific wavelength reflected by the pattern to be etched, the depo process being for forming the deposit layer, in which a processing condition of processes for forming the deposit layer of the next cycle and onward of cycle etching is determined so that an indicator of the depo film thickness calculated from the change amount of the film thickness of the deposit layer monitored falls in a predetermined range compared to reference data.

公开(公告)号：US20190122864A1

公开(公告)日：2019-04-25

申请号：US16228934

申请日：2018-12-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru ARAMAKI ,  Kenetsu YOKOGAWA ,  Masaru IZAWA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32192 ,  H01J37/32577 ,  H01J37/32715 ,  H01L21/31116

Abstract: A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the apparatus or method including processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed, during the processing.