公开(公告)号：US20240402614A1

公开(公告)日：2024-12-05

申请号：US18488047

申请日：2023-10-17

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao Jiang ,  Lei Li ,  Jiamin Liu ,  Shiyuan Liu

IPC: G03F7/00 ,  G01N21/21

Abstract: The disclosure provides a quasi-dynamic in situ ellipsometry method and system for measuring a photoresist exposure process. The method includes: obtaining a measured Muller matrix of a photoresist at different exposure times by a Muller matrix ellipsometer; building a forward optical model of the photoresist and obtaining a theoretical Mueller matrix; inverting and fitting the measured Mueller matrix and the theoretical Mueller matrix and obtaining ellipsometric parameters of the photoresist at different times, an average extinction coefficient, and a film thickness; building a relational model of a Dill parameter of the photoresist and optical properties of the photoresist, and an exposure model of the photoresist; building a relational model of a theoretical extinction coefficient and the extinction coefficient and obtaining theoretical extinction coefficients of the photoresist after different exposure times; and inverting and fitting the average extinction coefficient and the theoretical extinction coefficient and obtaining the Dill parameter.