公开(公告)号：US10739251B2

公开(公告)日：2020-08-11

申请号：US16126230

申请日：2018-09-10

Applicant: Huazhong University of Science and Technology

Inventor： Hao Jiang ,  Jiamin Liu ,  Shiyuan Liu ,  Song Zhang ,  Zhicheng Zhong ,  Xiuguo Chen ,  Honggang Gu

IPC: G01N21/21 ,  G02B5/30

Abstract: The present invention discloses a high temporal resolution Mueller matrix elliptical polarization measuring device and method. In the incident light path, four polarization modulation channels are used to split and modulate a pulse laser beam into four polarized beams in independent polarization states. Due to different light path differences, the pulse beams have a time interval of several nanoseconds, and thus four pulse laser beams are successively irradiated on the surface of the sample. In the reflected light path, six channel polarization detection modules are used to synchronously measure the Stokes vectors of the reflected beams on the sample surface. By using known incident and reflected Stokes vectors of the four pulse beams, linear equations can be solved to obtain the Mueller matrix of the sample.

公开(公告)号：US20240402614A1

公开(公告)日：2024-12-05

申请号：US18488047

申请日：2023-10-17

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Hao Jiang ,  Lei Li ,  Jiamin Liu ,  Shiyuan Liu

IPC: G03F7/00 ,  G01N21/21

Abstract: The disclosure provides a quasi-dynamic in situ ellipsometry method and system for measuring a photoresist exposure process. The method includes: obtaining a measured Muller matrix of a photoresist at different exposure times by a Muller matrix ellipsometer; building a forward optical model of the photoresist and obtaining a theoretical Mueller matrix; inverting and fitting the measured Mueller matrix and the theoretical Mueller matrix and obtaining ellipsometric parameters of the photoresist at different times, an average extinction coefficient, and a film thickness; building a relational model of a Dill parameter of the photoresist and optical properties of the photoresist, and an exposure model of the photoresist; building a relational model of a theoretical extinction coefficient and the extinction coefficient and obtaining theoretical extinction coefficients of the photoresist after different exposure times; and inverting and fitting the average extinction coefficient and the theoretical extinction coefficient and obtaining the Dill parameter.