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    Charged particle beam device and operation method therefor
    1.
    发明授权
    Charged particle beam device and operation method therefor 有权

    公开(公告)号：US11961701B2

    公开(公告)日：2024-04-16

    申请号：US17603225

    申请日：2019-04-24

    Applicant: Hitachi High-Tech Corporation

    Inventor： Tomoharu Nagashima ,  Kazuki Ikeda ,  Wen Li ,  Masashi Wada ,  Hajime Kawano

    IPC: H01J37/22 ,  G06F3/04847 ,  H01J37/28

    CPC classification number: H01J37/222 ,  G06F3/04847 ,  H01J37/28 ,  H01J2237/2448

    Abstract: When adjusting optical axes of a multi-beam charged particle beam device, because parameters of optical systems are inter-dependent, the time required to adjust the parameters increases. Thus, the present invention provides a charged particle beam device provided with an optical parameter setting unit for setting parameters of optical systems for emitting a plurality of primary charged particle beams to a sample, detectors for individually detecting a plurality of secondary charged particle beams discharged from the sample, a plurality of memories for storing signals detected by the detectors and converted into digital pixels in the form of images, evaluation value derivation units for deriving evaluation values of the primary charged particle beams from the images, and a GUI capable of displaying the images and receiving an input from a user, wherein the GUI displays the images and evaluation results based on the evaluation values and changes various optical parameters in real-time.

    Charged particle beam device
    4.
    发明授权
    Charged particle beam device 有权

    公开(公告)号：US11694871B2

    公开(公告)日：2023-07-04

    申请号：US17394604

    申请日：2021-08-05

    Applicant: Hitachi High-Tech Corporation

    Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

    IPC: H01J37/20 ,  H01L21/683 ,  H01J37/22

    CPC classification number: H01J37/20 ,  H01J37/222 ,  H01L21/6831 ,  H01J2237/2007

    Abstract: Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

    HIGH VOLTAGE AMPLIFIER
    6.
    发明公开
    HIGH VOLTAGE AMPLIFIER 审中-公开

    公开(公告)号：US20240223134A1

    公开(公告)日：2024-07-04

    申请号：US18288834

    申请日：2022-05-11

    Applicant: HITACHI HIGH-TECH CORPORATION

    Inventor： Ryohei KUDO ,  Tomoharu NAGASHIMA ,  Hisaaki KANAI ,  Wen Li ,  Shinichi MURAKAMI ,  Naoya ISHIGAKI

    IPC: H03F1/30 ,  H03F3/213

    CPC classification number: H03F1/301 ,  H03F3/213 ,  H03F2200/129

    Abstract: The high voltage amplifier includes: an input circuit configured to amplify an input signal and connected to a positive-electrode-side level shift circuit and a negative-electrode-side level shift circuit; a high-voltage output circuit including a positive-electrode-side output circuit configured to amplify a signal from the positive-electrode-side level shift circuit and a negative-electrode-side output circuit configured to amplify a signal from the negative-electrode-side level shift circuit; a feedback circuit which feeds back an output signal from the high-voltage output circuit to the input signal; a detection circuit configured to detect currents of the positive-electrode-side and negative-electrode-side output circuits, and an offset adjustment circuit configured to increase an offset amount of the negative-electrode-side level shift circuit to a negative side when a current of the positive-electrode-side output circuit increases, and increase an offset amount of the positive-electrode-side level shift circuit to a positive side when a current of the negative-electrode-side output circuit increases.

    CHARGED PARTICLE BEAM DEVICE
    8.
    发明申请
    CHARGED PARTICLE BEAM DEVICE 有权

    公开(公告)号：US20220059312A1

    公开(公告)日：2022-02-24

    申请号：US17394604

    申请日：2021-08-05

    Applicant: Hitachi High-Tech Corporation

    Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

    IPC: H01J37/20 ,  H01J37/22 ,  H01L21/683

    Abstract: Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

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