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1.发明申请公开(公告)号：US20230051023A1
公开(公告)日：2023-02-16
申请号：US17794202
申请日：2021-01-28
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO
IPC: G03F1/24
Abstract: Provided is a reflective mask blank which includes an absorber film.
The reflective mask blank of the present invention is a reflective mask blank including a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate, in which the thin film contains tin, tantalum, niobium, and oxygen, and the oxygen deficiency rate of the thin film is 0.15 or more and 0.28 or less.-
公开(公告)号：US20200310239A1
公开(公告)日：2020-10-01
申请号：US16754306
申请日：2018-10-16
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tsutomu SHOKI , Yohei IKEBE
Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
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公开(公告)号：US20180149962A1
公开(公告)日：2018-05-31
申请号：US15580331
申请日：2016-06-08
Applicant: HOYA CORPORATION
Inventor： Takumi KOBAYASHI , Kazuhiro HAMAMOTO , Tatsuo ASAKAWA , Tsutomu SHOKI
Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
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4.发明申请公开(公告)号：US20180067238A1
公开(公告)日：2018-03-08
申请号：US15705304
申请日：2017-09-15
Applicant: Hoya Corporation
Inventor： Kazuhiro HAMAMOTO , Toshihiko ORIHARA
CPC classification number: G02B5/0816 , G02B1/14 , G02B5/003 , G02B5/0891 , G02B5/26 , G02B5/285 , G03F1/24 , G03F1/52 , G03F1/84 , G03F7/70216
Abstract: A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus.The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value 1 of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10 μm−3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
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5.发明申请MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 审中-公开掩模基板，具有多层反射膜的基板，透射掩模层，反射掩模和半导体器件制造方法公开(公告)号：US20170010527A1
公开(公告)日：2017-01-12
申请号：US15275719
申请日：2016-09-26
Applicant: HOYA CORPORATION
Inventor： Toshihiko ORIHARA , Kazuhiro HAMAMOTO , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
IPC: G03F1/48 , H01L21/308 , G03F7/20 , G03F1/22 , G03F7/16
CPC classification number: G03F1/48 , B82Y10/00 , B82Y40/00 , C03C3/06 , C03C17/3435 , C03C17/3626 , C03C17/3636 , C03C17/3639 , C03C17/3649 , C03C17/3665 , C03C23/0075 , C03C2201/42 , C03C2218/33 , G02B5/08 , G02B5/0816 , G02B5/0891 , G03F1/22 , G03F7/16 , G03F7/2002 , G03F7/2004 , G03F7/70733 , H01L21/3081 , H01L21/3085
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.
Abstract translation: 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180329285A1
公开(公告)日：2018-11-15
申请号：US15539263
申请日：2015-12-15
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Yohei IKEBE
CPC classification number: G03F1/24 , C03C3/06 , C03C15/00 , C03C17/3435 , C03C17/3441 , C03C17/3636 , C03C23/0075 , C03C2204/08 , G03F1/32 , G03F1/48
Abstract: An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.
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7.发明申请MASK BLANK SUBSTRATE, SUBSTRATE WITH MULTILAYER REFLECTION FILM, TRANSMISSIVE MASK BLANK, REFLECTIVE MASK BLANK, TRANSMISSIVE MASK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE FABRICATION METHOD 审中-公开掩模基板，多层反射膜基板，传输掩模空白，反射掩模，传输掩模，反射掩模和半导体器件制造方法公开(公告)号：US20170023853A1
公开(公告)日：2017-01-26
申请号：US15134776
申请日：2016-04-21
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Toshihiko ORIHARA , Hirofumi KOZAKAI , Youichi USUI , Tsutomu SHOKI , Junichi HORIKAWA
IPC: G03F1/22 , G03F1/60 , H01L21/033 , G03F7/20
CPC classification number: G03F1/22 , G03F1/50 , G03F1/60 , G03F7/2004 , H01L21/0332 , H01L21/0334
Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） 通过用原子力显微镜测量在基板一侧的主表面中的面积为1μm×1μm的轴承面积（％）和轴承深度（nm）之间的关系，≤1.2nm，其中， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30分别表示承载面积为30％的轴承深度和轴承面积 70％。
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8.发明申请MULTILAYER REFLECTIVE FILM FORMED SUBSTRATE, REFLECTIVE MASK BLANK, MASK BLANK, METHODS OF MANUFACTURING THE SAME, REFLECTIVE MASK, AND MASK 审中-公开多层反射膜形成的基板，反射掩模层，掩模层，其制造方法，反射掩模和掩模公开(公告)号：US20170010525A1
公开(公告)日：2017-01-12
申请号：US15216072
申请日：2016-07-21
Applicant: HOYA CORPORATION
Inventor： Tsutomu SHOKI , Kazuhiro HAMAMOTO
IPC: G03F1/24
Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 μm or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.
Abstract translation: 提供了形成有用于准确地管理缺陷坐标的基准标记的多层反射膜形成基板。 在多层反射膜形成基板上形成多层反射膜，该多层反射膜适用于反射EUV光，并且在多层反射膜上形成用作缺陷信息中缺陷位置的基准的基准标记。 基准标记包括用于确定缺陷位置的参考点和布置在主标记周围的辅助标记的主标记。 主标记具有点对称形状，并且具有相对于电子束写入装置的扫描方向或缺陷检查光的宽度为200nm以上且10μm以下的部分。
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9.发明申请SUBSTRATE WITH MULTILAYER REFLECTIVE FILM, MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权具有多层反射膜，掩模层，传输掩模和制造半导体器件的方法的衬底公开(公告)号：US20160377769A1
公开(公告)日：2016-12-29
申请号：US14901575
申请日：2014-09-25
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Toshihiko ORIHARA
CPC classification number: G02B5/0816 , G02B1/14 , G02B5/003 , G02B5/0891 , G02B5/26 , G02B5/285 , G03F1/24 , G03F1/52 , G03F1/84 , G03F7/70216
Abstract: A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus.The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10−3 nm3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.
Abstract translation: 具有多层反射膜的基板具有通过在光刻中使用的掩模坯料基板的主表面交替层叠高折射率层和低折射率层而获得的多层反射膜，其中功率谱密度的积分值I 通过使用原子力显微镜测量3μm×3μm的区域获得的具有多层反射膜的基板的表面的1μm-1〜10μm的空间频率的PSD（PSD）不大于 180×10-3nm 3，空间频率为1μm〜10μm的功率谱密度（PSD）的最大值不大于50nm 4。
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公开(公告)号：US20160282711A1
公开(公告)日：2016-09-29
申请号：US15179030
申请日：2016-06-10
Applicant: HOYA CORPORATION
Inventor： Kazuhiro HAMAMOTO , Tatsuo ASAKAWA , Osamu MARUYAMA , Tsutomu SHOKI
IPC: G03F1/24
Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)≧L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.
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