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公开(公告)号：US20250003866A1
公开(公告)日：2025-01-02
申请号：US18461487
申请日：2023-09-05
Inventor： Xiuguo Chen , Shuo Liu , Shiyuan Liu
IPC: G01N21/21 , G01B11/24 , G06N3/0464 , G06N3/084
Abstract: Disclosed is a method for measuring optical properties and geometric properties of a thin film material, which belongs to the field of ellipsometry. The method realizes the automation of the ellipsometry data analysis with accurate results and includes using a spline model and a forward optical property model to generate a training set; training a neural network model; sequentially inputting preliminary results of geometric parameters and spline parameters of a material obtained by inputting the measured optical characterization quantity into the neural network into the spline model and the forward optical property model to obtain a theoretical optical characterization quantity. After optimizing the neural network model by using the deviation between the theory and the measured optical characterization quantity, the predicted value of the output is the final geometric and optical property parameters of the material.
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公开(公告)号：US11662197B2
公开(公告)日：2023-05-30
申请号：US16510983
申请日：2019-07-15
Inventor： Honggang Gu , Shiyuan Liu , Simin Zhu , Baokun Song , Hao Jiang , Xiuguo Chen
IPC: G01B11/06
CPC classification number: G01B11/0641
Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ρ of the ultra-thin film:
ρ
=
r
p
r
s
;
S2: performing a second-order Taylor expansion to
ρ
=
r
p
r
s
at df=0 while taking 2πdf/λ as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.-
公开(公告)号：US11619883B2
公开(公告)日：2023-04-04
申请号：US17407149
申请日：2021-08-19
Inventor： Xiuguo Chen , Shiyuan Liu
Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.
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公开(公告)号：US11644413B2
公开(公告)日：2023-05-09
申请号：US17054170
申请日：2020-05-15
Inventor： Honggang Gu , Baokun Song , Shiyuan Liu , Zhengfeng Guo , Mingsheng Fang , Hao Jiang , Xiuguo Chen
CPC classification number: G01N21/211 , G06F17/16 , G01N2021/213
Abstract: The disclosure relates to a method for measuring a dielectric tensor of a material. Firstly, a partial conversion matrix Tp and a transmission matrix Tt are determined by a predetermined initial value ε(E) of the dielectric tensor of the material to be measured, thereby obtaining a transfer matrix of an electromagnetic wave on a surface of the material to be measured by the partial conversion matrix Tp, the transmission matrix Tt, and an incident matrix Ti, a theoretical Mueller matrix spectrum MMCal(E) of the material to be measured is determined by the transfer matrix Tm. A fitting analysis is performed on the theoretical Mueller matrix spectrum MMCal(E) and a measured Mueller matrix spectrum MMExp(E) of the material to be measured to obtain the dielectric tensor of the material to be measured.
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公开(公告)号：US09070091B2
公开(公告)日：2015-06-30
申请号：US13754925
申请日：2013-01-31
Inventor： Shiyuan Liu , Jinlong Zhu , Chuanwei Zhang , Xiuguo Chen
CPC classification number: G06N99/005
Abstract: A method for extracting a critical dimension of a semiconductor nanostructure. The method includes: 1) determining a value range for each parameter to be extracted, whereby generating an electronic spectra database, and employing training spectra and support vector machine (SVM) training networks for training of SVMs; 2) employing the SVMs after training to map measured spectra to yield a corresponding electronic spectra database; and 3) employing a searching algorithm to search for an optimum simulation spectrum in the corresponding electronic spectra database, simulation parameters corresponding to the simulation spectrum being the critical dimension of the semiconductor nanostructure to be extracted.
Abstract translation: 一种用于提取半导体纳米结构的临界尺寸的方法。 该方法包括：1）确定要提取的每个参数的值范围，从而生成电子光谱数据库，并使用训练光谱和支持向量机（SVM）训练网络进行训练; 2）训练后采用SVM映射测得的光谱，得到相应的电子光谱数据库; 和3）采用搜索算法在对应的电子光谱数据库中搜索最佳模拟光谱，对应于模拟光谱的模拟参数是要提取的半导体纳米结构的临界尺寸。
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Patent Agency Ranking
公开(公告)号：US20220350261A1
公开(公告)日：2022-11-03
申请号：US17407149
申请日：2021-08-19
Inventor： Xiuguo Chen , Shiyuan Liu
Abstract: The disclosure belongs to the technical field related to on-line measurement in manufacture of integrated circuit, which discloses a snapshot type overlay error measuring device and a measuring method thereof. The measuring method includes: the detection light is subjected to polarization and retardation in sequence to obtain measurement spectrum; Fourier analysis is performed on the measurement spectrum to obtain the frequency-domain signal of the measurement spectrum, and sub-channel frequency-domain analysis is performed on the frequency-domain signal to obtain the linear combination of the non-diagonal Mueller matrix elements of the overlay error sample to be tested; the linear combination of the non-diagonal Mueller matrix elements are processed to obtain the overlay error of the overlay sample under test. This disclosure does not need to measure all 16 Mueller matrix elements, the measurement is carried out on only a few non-diagonal Mueller matrix elements which are sensitive to overlay error.
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公开(公告)号：US11143804B2
公开(公告)日：2021-10-12
申请号：US16162382
申请日：2018-10-16
Inventor： Honggang Gu , Shiyuan Liu , Xiuguo Chen , Hao Jiang , Chuanwei Zhang
Abstract: The present invention belongs to the field of optical detection devices, and specifically discloses a polarization modulator and a polarization measurement system, comprising a rotating compensator and a polarizer, in which the rotating compensator is a continuously rotating composite waveplate, the composite waveplate is composed of a plurality of single-waveplates of the same material, and the overall structure of the composite waveplate is determined by thicknesses and fast axis intersection angles of the respective single-waveplates according to the optimization design of the polarization characteristic transfer matrix of the polarization modulator. The polarization modulator of the invention has the advantages of simple structure, easy processing and a wide applicable wavelength range, and a wide-waveband polarization measurement system can be designed based on the polarization modulator, which is adapted to the requirements of wide-waveband precision polarization measurement.
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公开(公告)号：US10983007B2
公开(公告)日：2021-04-20
申请号：US16521603
申请日：2019-07-25
Inventor： Honggang Gu , Baokun Song , Shiyuan Liu , Mingsheng Fang , Xiuguo Chen , Hao Jiang
Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transition analysis. The invention realizes the analysis and interpretation of the optical transition characteristics occurring at the materials from the perspective of physics, which has the advantages of reliable operation process system and accurate and reliable analysis results.
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公开(公告)号：US20200333188A1
公开(公告)日：2020-10-22
申请号：US16521603
申请日：2019-07-25
Inventor： Honggang Gu , Baokun Song , Shiyuan Liu , Mingsheng Fang , Xiuguo Chen , Hao Jiang
Abstract: A material optical transition analysis method and system are provided, the method includes: determining a dielectric function spectrum of a material to be analyzed, calculating a second derivative spectrum of the dielectric function spectrum related to the excitation light energy, and performing the CP fitting analysis on the second derivative spectrum to obtain a CP analysis result diagram of the material; drawing an energy band structure diagram and a PDOS diagram of the material, and drawing an energy difference diagram between CBs and VBs according to the energy band structure diagram of the material; determining spatial positions of CPs and the corresponding CBs and the VBs according to the CP analysis result diagram of the material and the energy difference diagram between the CBs and the VBs; and finally indicating the CBs and the VBs in the energy band structure diagram, and determining the particle types participating in formation of the CPs in the PDOS diagram to complete the material optical transition analysis. The invention realizes the analysis and interpretation of the optical transition characteristics occurring at the materials from the perspective of physics, which has the advantages of reliable operation process system and accurate and reliable analysis results.
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公开(公告)号：US20200333132A1
公开(公告)日：2020-10-22
申请号：US16510983
申请日：2019-07-15
Inventor： Honggang Gu , Shiyuan Liu , Simin Zhu , Baokun Song , Hao Jiang , Xiuguo Chen
IPC: G01B11/06
Abstract: The invention discloses a rapid measurement method for an ultra-thin film optical constant, which includes following steps: S1: using a p-light amplitude reflection coefficient rp and an s-light amplitude reflection coefficient rs of an incident light irradiating to an ultra-thin film to be measured to express an amplitude reflection coefficient ratio ρ of the ultra-thin film: ρ = r p r s ; S2: performing a second-order Taylor expansion to ρ = r p r s at df=0 while taking 2πdf/λ as a variable to obtain a second-order approximation form; S3: performing merging, simplifying and substituting processing to the second-order approximation form for transforming the same into a one-variable quartic equation; S4: solving the one-variable quartic equation to obtain a plurality of solutions of the optical constant of the ultra-thin film, and obtaining a correct solution through conditional judgment, so as to achieve the rapid measurement for the ultra-thin film optical constant.
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