Sputtering process for making ferroelectric films
    1.
    发明授权
    Sputtering process for making ferroelectric films 失效
    用于制造电磁膜的溅射工艺

    公开(公告)号:US3681226A

    公开(公告)日:1972-08-01

    申请号:US3681226D

    申请日:1970-07-02

    Applicant: IBM

    CPC classification number: C23C14/3414 C23C14/088

    Abstract: THE FABRICATION, COMPOSITION AND UTILIZATION OF SPUTTERING CATHODES OR TAGETS FOR MIXED OXIDE OR FERROELECTRIC FILMS COMPRISING TWO OR MORE METALS. SUCH CATHODES ARE MADE FROM THE BLENDED METAL POWDERS BY COMPRESSION INTO DISKS. THESE DISKS ARE SOLDERED AGAINST A METALLIC, WATER-COOLED BACKING PLATE. SPUTTERING WITH DC OR RF POWER TAKES PLACE IN A REACTIVE, SPECIFICALLY AN OXIDIZING, ATMOSPHERE.

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