-
公开(公告)号：US20140217062A1
公开(公告)日：2014-08-07
申请号：US13762117
申请日：2013-02-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Thomas Kunstmann , Stefan Willkofer , Anja Gissibl , Johann Strasser , Matthias Mueller , Eva-Maria Hess
CPC classification number: C23F1/02 , C23F1/08 , C23F1/18 , H01L21/32134 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。
-
公开(公告)号：US09093385B2
公开(公告)日：2015-07-28
申请号：US13903013
申请日：2013-05-28
Applicant: Infineon Technologies AG
Inventor： Anja Gissibl , Hermann Wendt , Thomas Fischer , Bernhard Weidgans , Gudrun Stranzl , Tobias Schmidt , Dietrich Bonart
IPC: H01L21/00 , H01L21/306 , H01L21/3065 , H01L21/78
CPC classification number: H01L21/78 , H01L21/28568 , H01L21/30604 , H01L21/3065 , H01L21/32133 , H01L21/32134 , H01L21/76841 , H01L21/76892
Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.
Abstract translation: 提供了一种用于处理半导体工件的方法，其可以包括：提供包括设置在半导体工件侧面的金属化层堆叠的半导体工件，金属化层堆叠包括至少第一层和设置在第一层上的第二层 层，其中所述第一层包含第一材料，并且所述第二层包含不同于所述第一材料的第二材料; 图案化金属化层堆叠，其中图案化金属化层堆叠包括通过蚀刻溶液湿法蚀刻第一层和第二层，蚀刻溶液对于第一材料和第二材料具有至少基本上相同的蚀刻速率。
-
公开(公告)号：US08932476B2
公开(公告)日：2015-01-13
申请号：US13762117
申请日：2013-02-07
Applicant: Infineon Technologies AG
Inventor： Thomas Kunstmann , Stefan Willkofer , Anja Gissibl , Johann Strasser , Matthias Mueller , Eva-Maria Hess
CPC classification number: C23F1/02 , C23F1/08 , C23F1/18 , H01L21/32134 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。
-
公开(公告)号：US20140357055A1
公开(公告)日：2014-12-04
申请号：US13903013
申请日：2013-05-28
Applicant: Infineon Technologies AG
Inventor： Anja Gissibl , Hermann Wendt , Thomas Fischer , Bernhard Weidgans , Gudrun Stranzl , Tobias Schmidt , Dietrich Bonart
IPC: H01L21/306 , H01L21/78 , H01L21/3065
CPC classification number: H01L21/78 , H01L21/28568 , H01L21/30604 , H01L21/3065 , H01L21/32133 , H01L21/32134 , H01L21/76841 , H01L21/76892
Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.
Abstract translation: 提供了一种用于处理半导体工件的方法，其可以包括：提供包括设置在半导体工件侧面的金属化层堆叠的半导体工件，金属化层堆叠包括至少第一层和设置在第一层上的第二层 层，其中所述第一层包含第一材料，并且所述第二层包含不同于所述第一材料的第二材料; 图案化金属化层堆叠，其中图案化金属化层堆叠包括通过蚀刻溶液湿法蚀刻第一层和第二层，蚀刻溶液对于第一材料和第二材料具有至少基本上相同的蚀刻速率。
-
-
-
Search Results
4
records
(took 0.009 seconds)
