公开(公告)号：US20150235890A1

公开(公告)日：2015-08-20

申请号：US14182689

申请日：2014-02-18

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Eva-Maria Hess ,  Edward Fuergut ,  Christian Schweiger

IPC: H01L21/683 ,  H01L21/268 ,  H01L21/762 ,  H01L23/00 ,  H01L21/78 ,  H01L21/304

CPC classification number: H01L21/6835 ,  H01L21/268 ,  H01L21/304 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76251 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/02 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0231 ,  H01L2224/04105 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/82106 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/00 ,  H01L2224/82 ,  H05K3/467 ,  H01L2224/03 ,  H01L2924/01029

Abstract: A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.

Abstract translation: 一种制造半导体器件的方法包括提供具有第一侧和与第一侧相对的第二侧的载流子和半导体晶片。 该方法包括将介电材料施加到载体或半导体晶片，并通过电介质材料将半导体晶片接合到载体上。 该方法包括处理半导体晶片并从半导体晶片去除载体，使得介电材料保留在半导体晶片上，以提供包括电介质材料的半导体器件。

公开(公告)号：US09362127B2

公开(公告)日：2016-06-07

申请号：US13948208

申请日：2013-07-23

Applicant: Infineon Technologies AG

Inventor： Michael Krenzer ,  Thomas Kunstmann ,  Eva-Maria Hess ,  Manfred Frank

IPC: H01L21/285 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L21/28506 ,  H01L21/02068 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53242 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for processing a workpiece may include: providing a workpiece including a first region and a second region; forming a porous metal layer over the first region and the second region; wherein the first region and the second region are configured such that an adhesive force between the second region and the porous metal layer is lower than an adhesive force between the first region and the porous metal layer.

Abstract translation: 一种用于处理工件的方法可以包括：提供包括第一区域和第二区域的工件; 在所述第一区域和所述第二区域上形成多孔金属层; 其中所述第一区域和所述第二区域被构造成使得所述第二区域和所述多孔金属层之间的粘合力低于所述第一区域和所述多孔金属层之间的粘合力。

公开(公告)号：US20140217062A1

公开(公告)日：2014-08-07

申请号：US13762117

申请日：2013-02-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Thomas Kunstmann ,  Stefan Willkofer ,  Anja Gissibl ,  Johann Strasser ,  Matthias Mueller ,  Eva-Maria Hess

IPC: C23F1/02 ,  C23F1/08

CPC classification number: C23F1/02 ,  C23F1/08 ,  C23F1/18 ,  H01L21/32134 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。

公开(公告)号：US09355881B2

公开(公告)日：2016-05-31

申请号：US14182689

申请日：2014-02-18

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Eva-Maria Hess ,  Edward Fuergut ,  Christian Schweiger

IPC: H01L21/683 ,  H01L21/268 ,  H01L21/304 ,  H01L21/762 ,  H01L21/78 ,  H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L21/6835 ,  H01L21/268 ,  H01L21/304 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76251 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/02 ,  H01L24/24 ,  H01L24/82 ,  H01L24/97 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0231 ,  H01L2224/04105 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/82106 ,  H01L2224/96 ,  H01L2224/97 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/201 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/00 ,  H01L2224/82 ,  H05K3/467 ,  H01L2224/03 ,  H01L2924/01029

Abstract: A method for manufacturing a semiconductor device includes providing a carrier and a semiconductor wafer having a first side and a second side opposite to the first side. The method includes applying a dielectric material to the carrier or the semiconductor wafer and bonding the semiconductor wafer to the carrier via the dielectric material. The method includes processing the semiconductor wafer and removing the carrier from the semiconductor wafer such that the dielectric material remains on the semiconductor wafer to provide a semiconductor device comprising the dielectric material.

Abstract translation: 一种制造半导体器件的方法包括提供具有第一侧和与第一侧相对的第二侧的载流子和半导体晶片。 该方法包括将介电材料施加到载体或半导体晶片，并通过电介质材料将半导体晶片接合到载体上。 该方法包括处理半导体晶片并从半导体晶片去除载体，使得介电材料保留在半导体晶片上，以提供包括电介质材料的半导体器件。

公开(公告)号：US08932476B2

公开(公告)日：2015-01-13

申请号：US13762117

申请日：2013-02-07

Applicant: Infineon Technologies AG

Inventor： Thomas Kunstmann ,  Stefan Willkofer ,  Anja Gissibl ,  Johann Strasser ,  Matthias Mueller ,  Eva-Maria Hess

IPC: B44C1/22 ,  C23F1/02 ,  C23F1/08

CPC classification number: C23F1/02 ,  C23F1/08 ,  C23F1/18 ,  H01L21/32134 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。