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Patent Agency Ranking
公开(公告)号：US09570433B2
公开(公告)日：2017-02-14
申请号：US14859928
申请日：2015-09-21
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Vanessa Capodieci , Markus Dinkel , Uwe Schmalzbauer
IPC: H01L27/02 , H01L23/48 , H01L23/58 , H01L21/66 , H01L29/40 , H01L29/78 , H01L23/00 , G01R31/26 , H01L27/088 , H01L29/06 , H01L23/13
CPC classification number: H01L27/0207 , G01R31/26 , H01L22/34 , H01L23/13 , H01L23/48 , H01L23/562 , H01L23/58 , H01L23/585 , H01L27/088 , H01L29/0692 , H01L29/40 , H01L29/407 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.
Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。
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公开(公告)号：US09171777B2
公开(公告)日：2015-10-27
申请号：US13752670
申请日：2013-01-29
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Vanessa Capodieci , Markus Dinkel , Uwe Schmalzbauer
CPC classification number: H01L27/0207 , G01R31/26 , H01L22/34 , H01L23/13 , H01L23/48 , H01L23/562 , H01L23/58 , H01L23/585 , H01L27/088 , H01L29/0692 , H01L29/40 , H01L29/407 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.
Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。
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3.发明申请公开(公告)号：US20140167043A1
公开(公告)日：2014-06-19
申请号：US13719599
申请日：2012-12-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Markus Zundel , Vanessa Capodieci , Markus Dinkel , Uwe Schmalzbauer
IPC: H01L23/48 , H01L21/02 , H01L23/544
CPC classification number: H01L23/48 , H01L22/34 , H01L23/585 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.
Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。
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4.发明申请公开(公告)号：US20160013176A1
公开(公告)日：2016-01-14
申请号：US14859928
申请日：2015-09-21
Applicant: Infineon Technologies AG
Inventor： Markus Zundel , Vanessa Capodieci , Markus Dinkel , Uwe Schmalzbauer
CPC classification number: H01L27/0207 , G01R31/26 , H01L22/34 , H01L23/13 , H01L23/48 , H01L23/562 , H01L23/58 , H01L23/585 , H01L27/088 , H01L29/0692 , H01L29/40 , H01L29/407 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.
Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。
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5.发明申请公开(公告)号：US20140167044A1
公开(公告)日：2014-06-19
申请号：US13752670
申请日：2013-01-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Markus Zundel , Vanessa Capodieci , Markus Dinkel , Uwe Schmalzbauer
CPC classification number: H01L27/0207 , G01R31/26 , H01L22/34 , H01L23/13 , H01L23/48 , H01L23/562 , H01L23/58 , H01L23/585 , H01L27/088 , H01L29/0692 , H01L29/40 , H01L29/407 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.
Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。
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