公开(公告)号：US11804432B2

公开(公告)日：2023-10-31

申请号：US17173863

申请日：2021-02-11

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Sergey Ananiev ,  Andreas Behrendt ,  Holger Doepke ,  Uwe Schmalzbauer ,  Michael Sorger ,  Dominic Thurmer

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/76825 ,  H01L21/76837 ,  H01L23/5329 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

公开(公告)号：US20220254713A1

公开(公告)日：2022-08-11

申请号：US17173863

申请日：2021-02-11

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Sergey Ananiev ,  Andreas Behrendt ,  Holger Doepke ,  Uwe Schmalzbauer ,  Michael Sorger ,  Dominic Thurmer

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

公开(公告)号：US09570433B2

公开(公告)日：2017-02-14

申请号：US14859928

申请日：2015-09-21

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Vanessa Capodieci ,  Markus Dinkel ,  Uwe Schmalzbauer

IPC: H01L27/02 ,  H01L23/48 ,  H01L23/58 ,  H01L21/66 ,  H01L29/40 ,  H01L29/78 ,  H01L23/00 ,  G01R31/26 ,  H01L27/088 ,  H01L29/06 ,  H01L23/13

CPC classification number: H01L27/0207 ,  G01R31/26 ,  H01L22/34 ,  H01L23/13 ,  H01L23/48 ,  H01L23/562 ,  H01L23/58 ,  H01L23/585 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.

Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。

公开(公告)号：US09218960B2

公开(公告)日：2015-12-22

申请号：US14319534

申请日：2014-06-30

Applicant: Infineon Technologies AG

Inventor： Peter Nelle ,  Uwe Schmalzbauer ,  Juergen Holzmueller ,  Markus Zundel

IPC: H01L21/311 ,  H01L21/02 ,  H01L29/06 ,  H01L21/78 ,  H01L23/29 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/02359 ,  H01L21/02129 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/78 ,  H01L23/29 ,  H01L23/3192 ,  H01L23/562 ,  H01L29/0603 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes providing a layered structure having a hard dielectric layer containing a first dielectric material having a Young's modulus greater than 10 GPa in a central portion of a main surface of a main body comprising a single crystalline semiconductor body, and providing a dielectric stress relief layer containing a second dielectric material having a lower Young's modulus than the first dielectric material, the stress relief layer covering the layered structure and extending beyond an outer edge of the layered structure.

Abstract translation: 一种制造半导体器件的方法包括提供一种层状结构，其具有在包含单晶半导体主体的主体的主表面的中心部分中包含杨氏模量大于10GPa的第一介电材料的硬介电层，以及 提供包含具有比所述第一介电材料低的杨氏模量的第二介电材料的介电应力消除层，所述应力消除层覆盖所述层状结构并延伸超过所述层状结构的外边缘。

公开(公告)号：US20140346509A1

公开(公告)日：2014-11-27

申请号：US13899906

申请日：2013-05-22

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Uwe Schmalzbauer ,  Rudolf Zelsacher

IPC: H01L21/66

CPC classification number: H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L29/7391 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A first embodiment relates to a semiconductor component. The semiconductor component has a semiconductor body with a bottom side and a top side spaced distant from the bottom side in a vertical direction. In the vertical direction, the semiconductor body has a certain thickness. The semiconductor component further has a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body.

Abstract translation: 第一实施例涉及半导体部件。 半导体部件具有半导体本体，其具有在垂直方向上与底侧隔开的底侧和顶侧。 在垂直方向上，半导体本体具有一定的厚度。 半导体部件还具有构造成检测半导体本体的裂纹的裂纹传感器。 裂纹传感器延伸到半导体体内。 裂纹传感器和底侧之间的距离小于半导体本体的厚度。

公开(公告)号：US11810958B2

公开(公告)日：2023-11-07

申请号：US17400213

申请日：2021-08-12

Applicant: Infineon Technologies AG

Inventor： Felix Buth ,  Margarete Deckers ,  Christian Feuerbaum ,  Uwe Schmalzbauer ,  Markus Zundel

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/40

CPC classification number: H01L29/4236 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/4238 ,  H01L29/7813

Abstract: A transistor includes: gate electrodes and field electrodes, wherein in each case one gate electrode and one field electrode are arranged one above another in a vertical direction in a common trench of a semiconductor body; a gate pad to which the gate electrodes are connected; and a source metallization arranged above the semiconductor body. The field electrodes of a first group include at least one contact section. The at least one contact section is arranged between two sections of a gate electrode arranged in the same trench and is connected to the source metallization. The two sections of the gate electrode are separated from one another in a region of the contact section. At least one of the two sections of the gate electrode arranged in the same trench is electrically connected to a gate electrode arranged in a further trench by way of a gate connecting electrode.

公开(公告)号：US20160013176A1

公开(公告)日：2016-01-14

申请号：US14859928

申请日：2015-09-21

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Vanessa Capodieci ,  Markus Dinkel ,  Uwe Schmalzbauer

IPC: H01L27/02 ,  H01L29/06 ,  G01R31/26 ,  H01L23/58 ,  H01L29/40 ,  H01L21/66 ,  H01L27/088

CPC classification number: H01L27/0207 ,  G01R31/26 ,  H01L22/34 ,  H01L23/13 ,  H01L23/48 ,  H01L23/562 ,  H01L23/58 ,  H01L23/585 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.

Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。

公开(公告)号：US20140167044A1

公开(公告)日：2014-06-19

申请号：US13752670

申请日：2013-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Markus Zundel ,  Vanessa Capodieci ,  Markus Dinkel ,  Uwe Schmalzbauer

IPC: H01L23/48 ,  H01L21/02

CPC classification number: H01L27/0207 ,  G01R31/26 ,  H01L22/34 ,  H01L23/13 ,  H01L23/48 ,  H01L23/562 ,  H01L23/58 ,  H01L23/585 ,  H01L27/088 ,  H01L29/0692 ,  H01L29/40 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. The main region extends over the main surface of the semiconductor substrate leaving open at least one corner area at a corner of the polygonal geometry of the main surface of the semiconductor substrate. The corner area extends at least 300 μm along the edges of the semiconductor substrate beginning at the corner.

Abstract translation: 半导体器件包括半导体衬底，该半导体衬底包括具有多边形几何形状的主表面和在半导体衬底上的主区域内制造的主电路。 主电路可操作以执行电主功能。 主区域在半导体衬底的主表面上延伸，在半导体衬底的主表面的多边形几何形状的拐角处打开至少一个拐角区域。 拐角区域从角部开始沿着半导体衬底的边缘延伸至少300μm。

公开(公告)号：US20160254200A1

公开(公告)日：2016-09-01

申请号：US15149765

申请日：2016-05-09

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Uwe Schmalzbauer ,  Rudolf Zelsacher

IPC: H01L21/66 ,  H01L23/00 ,  H01L29/739

CPC classification number: H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L29/7391 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A semiconductor component includes a semiconductor body having a bottom side, a top side spaced distant from the bottom side in a vertical direction, and a thickness in the vertical direction, and a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body. A crack in the semiconductor body is detected by specifying a first value of a characteristic variable of the crack sensor, determining a second value of the characteristic variable of the crack sensor at a different time than the first value is specified, and determining the semiconductor body has a crack if the second value differs from the first value by more than a pre-defined difference.

Abstract translation: 半导体部件包括半导体本体，其具有底侧，与上下方向的底侧间隔开的顶面，以及垂直方向的厚度，以及构造为检测半导体本体的裂纹的裂纹传感器。 裂纹传感器延伸到半导体体内。 裂纹传感器和底侧之间的距离小于半导体本体的厚度。 通过指定裂纹传感器的特性变量的第一值，确定裂纹传感器的特性变量的第二值与指定第一值不同的时间来检测半导体本体中的裂纹，并且确定半导体本体 如果第二个值与第一个值的差异大于预定义的差异，则会产生破裂。

公开(公告)号：US09343381B2

公开(公告)日：2016-05-17

申请号：US13899906

申请日：2013-05-22

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Uwe Schmalzbauer ,  Rudolf Zelsacher

IPC: H01L27/14 ,  H01L21/66 ,  H01L23/00

CPC classification number: H01L22/14 ,  H01L22/32 ,  H01L22/34 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L29/7391 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

Abstract: A first embodiment relates to a semiconductor component. The semiconductor component has a semiconductor body with a bottom side and a top side spaced distant from the bottom side in a vertical direction. In the vertical direction, the semiconductor body has a certain thickness. The semiconductor component further has a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body.

Abstract translation: 第一实施例涉及半导体部件。 半导体部件具有半导体本体，其具有在垂直方向上与底侧隔开的底侧和顶侧。 在垂直方向上，半导体本体具有一定的厚度。 半导体部件还具有构造成检测半导体本体的裂纹的裂纹传感器。 裂纹传感器延伸到半导体体内。 裂纹传感器和底侧之间的距离小于半导体本体的厚度。